IRL630S Vishay, IRL630S Datasheet

MOSFET N-CH 200V 9A D2PAK

IRL630S

Manufacturer Part Number
IRL630S
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRL630S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL630S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL630S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL630SPBF
Manufacturer:
PH
Quantity:
7 209
Company:
Part Number:
IRL630STRLPBF
Quantity:
70 000
Part Number:
IRL630STRRPBF
Manufacturer:
IR
Quantity:
9 574
Company:
Part Number:
IRL630STRRPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90390
S10-2476-Rev. B, 01-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 9.0 A, dI/dt  120 A/μs, V
G D
= 25V, starting T
()
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 4.6 mH, R
c
a
b
DD
V
GS
 V
e
= 5 V
DS
G
, T
D
SiHL630S-GE3
IRL630SPbF
SiHL630S-E3
IRL630S
SiHL630S
N-Channel MOSFET
e
2
J
Single
PAK (TO-263)
 150 °C.
200
5.5
40
24
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.40
V
GS
AS
at 5 V
= 9.0 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R
• 150 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
SiHL630STRR-GE3
SiHL630STR-E3
IRL630STRR
SiHL630STR
D
IRL630STRRPbF
2
Definition
PAK (TO-263) is suitable for high current applications
2
DS(on)
PAK (TO-263)
2
PAK (TO-263) is a surface mount power package
Specified at V
SYMBOL
T
dV/dt
a
a
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
a
stg
a
a
GS
design,
IRL630S, SiHL630S
= 4 V and 5 V
- 55 to + 150
LIMIT
D
SiHL630STRL-GE3
IRL630STRLPbF
SiHL630STL-E3
IRL630STRL
SiHL630STL
0.025
300
± 10
0.59
200
250
9.0
5.7
9.0
7.4
3.1
5.0
2
36
74
low
PAK (TO-263)
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
a
a
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRL630S Summary of contents

Page 1

... SiHL630S SiHL630STR = 25 °C, unless otherwise noted ° 100 ° ° °C A for  9.0 A (see fig. 12  150 ° IRL630S, SiHL630S Vishay Siliconix Specified and device design, low on-resistance 2 D PAK (TO-263) a SiHL630STRL-GE3 a IRL630STRLPbF a a SiHL630STL- IRL630STRL a a SiHL630STL SYMBOL LIMIT V ...

Page 2

... IRL630S, SiHL630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 2.25V 100 = 25 °C C 2.25V 20μs PULSE WIDTH T = 150° 100 = 150 °C C IRL630S, SiHL630S Vishay Siliconix 100 150° 25° 50V DS 20μs PULSE WIDTH 0.01 2.0 2.5 3.0 3.5 4.0 ...

Page 4

... IRL630S, SiHL630S Vishay Siliconix 2000 1MHz iss rss oss ds gd 1500 C iss 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 SHORTED ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90390 S10-2476-Rev. B, 01-Nov-10 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL630S, SiHL630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...

Page 6

... IRL630S, SiHL630S Vishay Siliconix Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 TOP 500 BOTTOM 4.0A ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRL630S, SiHL630S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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