IRLL110 Vishay, IRLL110 Datasheet
IRLL110
Specifications of IRLL110
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IRLL110 Summary of contents
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... SiHLL110-E3 IRLL110 SiHLL110 = 25 °C, unless otherwise noted ° 5 100 ° ° °C A for Ω 1.5 A (see fig. 12 ≤ 150 °C. J IRLL110, SiHLL110 Vishay Siliconix Specified and device design, low on-resistance SOT-223 - a IRLL110TRPbF a SiHLL110T-E3 a IRLL110TR a SiHLL110T SYMBOL LIMIT V 100 DS V ± 1.5 ...
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... IRLL110, SiHLL110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91320 S10-1257-Rev. C, 31-May-10 IRLL110, SiHLL110 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...
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... IRLL110, SiHLL110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91320 S10-1257-Rev. C, 31-May-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91320 S10-1257-Rev. C, 31-May-10 IRLL110, SiHLL110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRLL110, SiHLL110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRLL110, SiHLL110 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...