IRLZ44Z International Rectifier, IRLZ44Z Datasheet

MOSFET N-CH 55V 51A TO-220AB

IRLZ44Z

Manufacturer Part Number
IRLZ44Z
Description
MOSFET N-CH 55V 51A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLZ44Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 25V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLZ44Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLZ44Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLZ44ZL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLZ44ZLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLZ44ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLZ44ZPBF
Manufacturer:
INF
Quantity:
3 533
Company:
Part Number:
IRLZ44ZSPBF
Quantity:
9 000
Company:
Part Number:
IRLZ44ZSTRLPBF
Quantity:
9 000
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Features
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
D
GS
AS (Thermally limited)
AS
AR
J
STG
θJC
θCS
θJA
θJA
@ T
@ T
@T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
k
Ù
Parameter
Parameter
ik
AUTOMOTIVE MOSFET
GS
GS
g
@ 10V
@ 10V
d
jk
i
ik
(Silicon Limited)
h
TO-220AB
G
IRLZ44Z
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
S
D
IRLZ44ZS
-55 to + 175
D
y
Max.
in (1.1N
2
0.53
204
± 16
110
51
36
80
78
Pak
®
R
DS(on)
Power MOSFET
y
V
m)
Max.
DSS
1.87
I
–––
62
40
D
IRLZ44ZS
IRLZ44ZL
= 51A
= 13.5mΩ
IRLZ44Z
PD - 95849
IRLZ44ZL
= 55V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRLZ44Z Summary of contents

Page 1

... Parameter 95849 IRLZ44Z IRLZ44ZS IRLZ44ZL ® HEXFET Power MOSFET 55V DSS R = 13.5mΩ DS(on 51A Pak TO-262 IRLZ44ZS IRLZ44ZL Max. Units 204 80 W 0.53 W/°C ± 110 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 175°C 10 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = Ciss 1500 1000 500 Coss ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 31A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. HEXFET Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" For GB Production T HIS IS AN ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLEC- TOR 11 ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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