IS62C1024AL-35Q ISSI [Integrated Silicon Solution, Inc], IS62C1024AL-35Q Datasheet

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IS62C1024AL-35Q

Manufacturer Part Number
IS62C1024AL-35Q
Description
128K x 8 LOW POWER CMOS STATIC RAM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet

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IS62C1024AL
IS65C1024AL
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
01/24/05
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
128K x 8 LOW POWER CMOS
STATIC RAM
FEATURES
• High-speed access time: 35, 45 ns
• Low active power: 100 mW (typical)
• Low standby power: 20 µW (typical) CMOS
• Output Enable (OE) and two Chip Enable
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, Industrial, and Automotive tem-
• Standard Pin Configuration:
• Lead free available
standby
(CE1 and CE2) inputs for ease in applications
required
perature ranges available
32-pin SOP/ 32-pin TSOP (Type 1)
I/O0-I/O7
A0-A16
V
GND
DD
CE1
CE2
OE
WE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
word by 8-bit CMOS static RAM. It is fabricated using high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
ISSI
MEMORY ARRAY
IS62C1024AL/IS65C1024AL is a low power, 131,072-
COLUMN I/O
128K x 8
JANUARY 2005
ISSI
®
1

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IS62C1024AL-35Q Summary of contents

Page 1

... Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. DECODER MEMORY ARRAY I/O DATA CIRCUIT CE1 CONTROL CE2 CIRCUIT OE WE 1-800-379-4774 ISSI JANUARY 2005 IS62C1024AL/IS65C1024AL is a low power, 131,072- 128K x 8 COLUMN I/O ® 1 ...

Page 2

... A8 3 A13 CE2 6 A15 A16 10 A14 11 A12 OPERATING RANGE (IS62C1024AL) Range Commercial Industrial OPERATING RANGE (IS65C1024AL) Range Automotive CE2 I/O Operation X X High High High OUT Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 3

... IS62C1024AL IS65C1024AL ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Storage Temperature STG P Power Dissipation Output Current (LOW) OUT Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 4

... IS62C1024AL IS65C1024AL IS62C1024AL/IS65C1024AL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions CE1 = V I Average operating CC Current I Dynamic Operating Supply Current I OUT V IN CE2 = V I TTL Standby Current (TTL Inputs CE2 V I CMOS Standby ...

Page 5

... IS62C1024AL IS65C1024AL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 1a and 1b AC TEST LOADS 1838 5V OUTPUT 100 pF Including jig and scope Figure 1a. AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS DOUT Integrated Silicon Solution, Inc. — ...

Page 6

... IS62C1024AL IS65C1024AL (1,3) READ CYCLE NO. 2 ADDRESS OE CE1 CE2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = V 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time ...

Page 7

... IS62C1024AL IS65C1024AL AC WAVEFORMS WE WE Controlled WRITE CYCLE NO. 1 (WE ADDRESS CE1 CE2 DOUT DATA UNDEFINED DIN CE1 CE1 CE1 CE1, CE2 Controlled) WRITE CYCLE NO. 2 (CE1 ADDRESS t SA CE1 CE2 WE DOUT DATA UNDEFINED DIN Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 8

... IS62C1024AL IS65C1024AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical Values are measured 5V DATA RETENTION WAVEFORM (CE1 VDD 4.5V 2. CE1 GND DATA RETENTION WAVEFORM (CE2 Controlled) VDD 4 ...

Page 9

... Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 35 IS62C1024AL-35Q 35 IS62C1024AL-35T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 35 IS62C1024AL-35QI 35 IS62C1024AL-35QLI 35 IS62C1024AL-35TI 35 IS62C1024AL-35TLI ORDERING INFORMATION: IS65C1024AL Automotive Range: -40°C to +125°C Speed (ns) Order Part No. 45 IS65C1024AL-45QA3 45 IS65C1024AL-45TA3 Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 10

PACKAGING INFORMATION 450-mil Plastic SOP Package Code: Q (32-pin MILLIMETERS Symbol Min. Max. No. Leads A — 3.00 A1 0.10 — B 0.36 0.51 C 0.15 0.30 D 20.14 20.75 E 13.87 14.38 E1 11.18 ...

Page 11

PACKAGING INFORMATION Plastic TSOP-Type I Package Code: T (32-pin MILLIMETERS Symbol Min. Max. No. Leads A — 1.20 A1 0.05 0.25 B 0.17 0.23 C 0.12 0.17 D 7.90 8.10 E 18.30 18.50 H 19.80 20.20 e ...

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