IXDI430 IXYS [IXYS Corporation], IXDI430 Datasheet

IXDI430

Manufacturer Part Number

IXDI430

Description

30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

Manufacturer

IXYS [IXYS Corporation]

Datasheet

1.IXDI430.pdf (12 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXDI430CI

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PAN

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6 221

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Features

• Built using the advantages and compatibility

• Latch-Up Protected

• High Peak Output Current: 30A Peak

• Wide Operating Range: 8.5V to 35V

• Under Voltage Lockout Protection

• Ability to Disable Output under Faults

• High Capacitive Load

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving MOSFETs and IGBTs

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON / OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Limiting di/dt Under Short Circuit

• Class D Switching Amplifiers

of CMOS and IXYS HDMOS

Drive Capability: 5600 pF in <25ns

Ordering Information

P a rt N u m b e r

IX D D 4 3 0 Y I

IX D D 4 3 0 C I

IX D N 4 3 0 Y I

IX D N 4 3 0 C I

IX D S 4 3 0 S I

IX D I4 3 0 C I

IX D I4 3 0 Y I

IXDN430 / IXDI430 / IXDD430 / IXDS430

30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

P a c k a g e T yp e

processes

5 -p in T O -2 6 3

5 -p in T O -2 2 0

5 -p in T O -2 6 3

5 -p in T O -2 2 0

5 -p in T O -2 6 3

5 -p in T O -2 2 0

2 8 -p in S O IC

General Description

The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high

current gate drivers specifically designed to drive MOSFETs

and IGBTs to their minimum switching time and maximum

practical frequency limits. The IXD_430 can source and sink

30A of peak current while producing voltage rise and fall times

of less than 30ns. The input of the drivers are compatible with

TTL or CMOS and are fully immune to latch up over the entire

operating range. Designed with small internal delays, cross

conduction/current shoot-through is virtually eliminated in all

configurations. Their features and wide safety margin in

operating voltage and power make the drivers unmatched in

performance and value.

The IXD_430 incorporates a unique ability to disable the output

under fault conditions. The standard undervoltage lockout is at

12.5V which can also be set to 8.5V in the IXDS430SI. When a

logical low is forced into the Enable inputs, both final output

stage MOSFETs (NMOS and PMOS) are turned off. As a

result, the output of the IXDD430 enters a tristate mode and

enables a Soft Turn-Off of the MOSFET when a short circuit is

detected. This helps prevent damage that could occur to the

MOSFET if it were to be switched off abruptly due to a dv/dt

over-voltage transient.

The IXDN430 is configured as a noninverting gate driver, and the

IXDI430 is an inverting gate driver. The IXDS430 can be configured

either as a noninverting or inverting driver. The IXD_430 are available

in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the

TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28-

pin SOIC package refers to the backside metal heatsink tab.

-5 5 °C to + 1 2 5 °

T e m p . R a n g e

First Release

In ve rtin g w ith E n a b le

N o n In ve rtin g w ith

C o n fig u ra tio n

In ve rtin g / N o n

N o n In ve rtin g

a n d U V S E L

In ve rtin g

E n a b le

DS99045B(8/04)

Related parts for IXDI430

IXDI430 Summary of contents

Page 1

... MOSFET if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDN430 is configured as a noninverting gate driver, and the IXDI430 is an inverting gate driver. The IXDS430 can be configured either as a noninverting or inverting driver. The IXD_430 are available in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface mount packages ...

Page 2

... Figure 1D - IXDS430 (Inverting and Non Inverting with Enable) Diagram Vcc 1K IN 400K EN INV GND Note: Out P and Out N are connected together in the 5 lead TO-220 and TO-263 packages. IXDN430 / IXDI430 / IXDD430 / IXDS430 400k Figure 1C - IXDI430 (Inverting) Diagram 400K 2 Vcc OUT P OUT N GND ...

Page 3

... Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. IXDN430 / IXDI430 / IXDD430 / IXDS430 Operating Ratings (Note 1) ...

Page 4

... Off-time propagation OFFDLY delay V Power supply voltage CC 5-lead TO-220 Outline (IXD_430CI) 28-pin SOIC Outline (IXD_430SI) NOTE: Mounting tabs, solder tabs, or heat sink metalization on all packages are connected to ground. IXDN430 / IXDI430 / IXDD430 / IXDS430 C, 4.5 ≤ V ≤ 35V . +125 o CC Test Conditions 4.5V ≤ V ≤ ...

Page 5

... GND Ground Select Under UVSEL Voltage Level * This pin is used only on the IXDD430, and is N/C (not connected) on the IXDI430 and IXDN430. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 2 - Characteristics Test Diagram C ...

Page 6

... Load Capacitance (pF) Rise and Fall Times vs. Temperature Fig 5600 pF, Vcc = 18V -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig 15000 pF 20 10000 pF 5600 1000 Fig. 6 13V 30 18V 35V 25 20 ...

Page 7

... Supply Current vs. Load Capacitance Vcc = 25V 400 350 2 MHz 1 MHz 300 250 200 500 kHz 150 100 100 kHz 50 50 kHz 10 kHz 0 1000 10000 Load Capacitance (pF) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 10 1000 100 10 0.1 100000 Fig. 12 1000 100 z 0.1 100000 Fig. 14 1000 100 10 0.1 100000 7 Supply Current vs ...

Page 8

... Supply Voltage (V) Fig. 19 Propagation Delay Times vs. Temperature C = 5600pF, Vcc = 18V ONDLY 40 t OFFDLY -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 16 1000 100 100000 Fig Fig. 20 0.6 0.5 0.4 0.3 0.2 ...

Page 9

... V cc (V) P Channel Output Current vs. Temperature Fig. 25 Vcc = 18V -60 - Temperature (C) IXDN430 / IXDI430 / IXDD430 / IXDS430 Fig. 22 0.25 0.2 0.15 0.1 0. Fig Fig ...

Page 10

... EN IXDD430 VCC VCCA VCC VIN GND - - SUB NAND NOT2 CD4011A CD4049A R Q NOT3 NOR1 CD4049A CD4001A NOR2 CD4001A SR Flip-Flop 10 IXDN430 / IXDI430 / IXDD430 / IXDS430 Rg OUT 1ohm Rsh 1.5k ohm Low_Power 2N7002/PLP R+ 10kohm Rcomp Comp 5kohm + LM339 V+ V- Ccomp - 1pF + - REF 10uH Rd 0 ...

Page 11

... Supply Bypassing and Grounding Practices, Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDD430/IXDI430/IXDN430 very important to keep certain design criteria in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance ...

Page 12

... IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 www.ixys.com e-mail: sales@ixys.net IXDN430 / IXDI430 / IXDD430 / IXDS430 A TTL or 5V CMOS logic low emitter will drive it on. This causes the level translator output, the Q1 collector output to settle =<~2V, which is sufficiently low to be correctly interpreted TTLLOW as a high voltage CMOS logic low (< ...

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