IXGH17N100 IXYS, IXGH17N100 Datasheet
IXGH17N100
Manufacturer Part Number
IXGH17N100
Description
IGBT 34A 1000V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXGH17N100A.pdf
(2 pages)
Specifications of IXGH17N100
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 17A
Current - Collector (ic) (max)
34A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
34
Ic90, Tc=90°c, Igbt, (a)
17
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
750
Eoff, Typ, Tj=125°c, Igbt, (mj)
8
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH17N100
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH17N100A
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH17N100AU1
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH17N100U1
Manufacturer:
IXYS
Quantity:
18 000
Low V
High speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
© 1996 IXYS All rights reserved
CES
C25
C90
CM
GES
CES
CGR
GES
GEM
C
J
JM
stg
GE(th)
CE(sat)
d
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 H
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
IGBT
= 3 mA, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
VJ
GE
CES
GE
= 15 V
= 125 C, R
= 20 V
CE
= 0 V
= V
GE
GE
= 1 M
G
= 82
T
T
17N100
17N100A
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
IXGH/IXGM 17 N100
IXGH/IXGM 17 N100A 1000 V 34 A
TO-204 = 18 g, TO-247 = 6 g
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
1000
1000
= 34
150
150
300
CES
20
30
34
17
68
max.
250
100
3.5
4.0
5
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
V
C
C
C
C
A
TO-247 AD (IXGH)
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
Features
Applications
Advantages
International standard packages
2nd generation HDMOS
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125 C)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
1000 V 34 A
V
G
CES
C
CE(sat)
E
C
C = Collector,
TAB = Collector
I
C25
TM
process
91515E (3/96)
V
3.5 V
4.0 V
CE(sat)
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IXGH17N100 Summary of contents
Page 1
... V GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A 1000 Maximum Ratings 1000 = 1 M 1000 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values ( unless otherwise specified) J min ...
Page 2
... IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the IXGH 17N100U1 and IXGH 17N100AU1 data sheets. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 17N100 IXGH 17N100A ...