IXGH30N60C2 IXYS, IXGH30N60C2 Datasheet
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Manufacturer Part Number
IXGH30N60C2
Description
IGBT 600V 70A TO-247
Specifications of IXGH30N60C2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.4
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH30N60C2 D1
HiPerFAST
C2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
CES
GES
GEM
C
J
JM
stg
CES
CGR
GES
GE(th)
CE(sat)
© 2005 IXYS All rights reserved
d
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3) (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
I
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 24 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
T
(T
J
J
J
J
= 25°C
= 150°C
= 25°C
= 25°C
J
= 25°C, unless otherwise specified)
IXGH 30N60C2
IXGT 30N60C2
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2.0
1.13/10Nm/lb.in.
I
CM
150
600
600
±20
±30
= 60
190
250
150
300
70
30
max.
±100
5.0
6
4
2.7
50
1
V
mA
°C
nA
°C
°C
°C
°C
µA
W
V
V
V
V
A
A
A
A
g
g
V
V
TO-268 (IXGT)
TO-247 (IXGH)
G = Gate,
E = Emitter,
Features
Applications
Very high frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CE(sat)
CES
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
E
DS99168A(01/05)
2.7 V
70 A
32 ns
C (TAB)
C (TAB)
Related parts for IXGH30N60C2
IXGH30N60C2 Summary of contents
... V GE(th CES CE CES ±20 V GES CE(sat © 2005 IXYS All rights reserved IXGH 30N60C2 IXGT 30N60C2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 250 1.13/10Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 48A C 4 24A 12A 3 Volts G E © 2005 IXYS All rights reserved 270 240 9V 210 180 150 7V 120 2.5 3 3.5 1.2 9V 1.1 1.0 7V 0.9 0.8 0.7 5V 0.6 0.5 2 ...
Fig. 7. Transconductance 25ºC J 125º 100 120 140 160 180 200 I - Amperes C Fig. 9. Dependence of Turn-Off Energy ...
... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2005 IXYS All rights reserved 12A C 3 24A 48A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 30N60C2 IXGT 30N60C2 Fig ...
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