IXTK180N15 IXYS, IXTK180N15 Datasheet
IXTK180N15
Manufacturer Part Number
IXTK180N15
Description
MOSFET N-CH 150V 180A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTK180N15.pdf
(2 pages)
Specifications of IXTK180N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
800W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
730 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.011
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
220
Trr, Typ, (ns)
120
Pd, (w)
800
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK180N15
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXTK180N15P
Manufacturer:
IXYS
Quantity:
18 000
© 2003 IXYS All rights reserved
High Current
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D(RMS)
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 ms, duty cycle d 2%
T
T
S
C
J
J
C
C
C
J
GS
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25 C MOSFET chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
DSS
, di/dt
, I
TM
D
D
D
= 1 mA
= 250 A
= 0.5 I
G
FET
100 A/ s, V
= 2
DS
D25
= 0
GS
= 1.0 M
DD
T
T
Advance Technical Information
J
J
V
= 25°C
= 125°C
DSS
JM
150
IXTK 180N15
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
0.7/6
±20
±30
150
150
180
720
730
150
300
3.0
75
90
64
10
5
±200
4.0
50
Nm/lb.in.
Max.
3 mA
9 m
V/ns
mJ
nA
W
A
A
A
A
V
V
C
C
C
C
A
g
J
V
V
V
V
TO-264 AA (IXTK)
G = Gate
S = Source
Features
•
•
•
•
Applications
•
•
•
Advantages
•
•
•
V
I
R
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 150
= 180
=
D
Tab = Drain
TM
= Drain
DS98878C(03/03)
9 m
process
V
A
D (TAB)
Related parts for IXTK180N15
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXTK180N15 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 ms, duty cycle d 2% © 2003 IXYS All rights reserved Advance Technical Information IXTK 180N15 Maximum ratings 150 = 1.0 M 150 ±20 ±30 180 75 720 3 DSS 730 -55 ... +150 150 -55 ... +150 300 0.7/6 Nm/lb ...
Page 2
... S GS Pulse test, t 300 µs, duty cycle 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. Max. 65 110 9200 2525 ...