KSA642 Fairchild Semiconductor, KSA642 Datasheet

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KSA642

Manufacturer Part Number
KSA642
Description
Ksa642 Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
Low Frequency Power Amplifier
• Complement to KSD227
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty cycle 2%
h
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
V
C
CP
CBO
EBO
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
C
= 400mW
T
a
=25 C unless otherwise noted
T
Parameter
a
70 ~ 140
=25 C unless otherwise noted
O
KSA642
I
I
I
V
V
V
I
C
C
E
C
CB
EB
CE
= -100 A, I
= -10mA. I
= -300mA, I
= -10 A. I
= -3V, I
= -25V, I
= -1V, I
Test Condition
C
C
C
E
=0
B
= -50mA
E
=0
=0
=0
B
=0
= -30mA
120 ~ 240
Y
1. Emitter 2. Base 3. Collector
1
Min.
-30
-25
- 5
70
-55 ~ 150
Ratings
-300
-500
400
150
-30
-25
-5
-0.35
Typ.
TO-92
200 ~ 400
Max.
-100
-100
-0.6
400
G
Units
mW
Rev. A1, June 2001
mA
mA
V
V
V
C
C
Units
nA
nA
V
V
V
V

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KSA642 Summary of contents

Page 1

... Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE * Pulse Test: PW 350 s, Duty cycle 2% h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSA642 = 400mW T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA. I ...

Page 2

... I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltag Collector-Emitter Saturation Voltage 1MHz -10 V [V], COLLECTOR BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation 1000 =-0.8mA 100 I =-0.6mA B I =-0.4mA B I =-0.2mA -10 -1000 ...

Page 3

... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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