KSA931 Fairchild Semiconductor, KSA931 Datasheet
KSA931
Manufacturer Part Number
KSA931
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSA931.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSA931-Y
Manufacturer:
FSC
Quantity:
6 000
Company:
Part Number:
KSA931-Y
Manufacturer:
FSC
Quantity:
12 000
Company:
Part Number:
KSA931-Y
Manufacturer:
FSC
Quantity:
10 000
Company:
Part Number:
KSA931-Y-SH
Manufacturer:
SAMSUNG
Quantity:
269
©2002 Fairchild Semiconductor Corporation
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSC2331
• Collector-Base Voltage : V
• Collector Power Dissipation : P
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 350 s, Duty cycle 2%
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Productor
Output Capacitance
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CBO
= -80V
C
=1W
T
40 ~ 80
a
=25 C unless otherwise noted
R
T
Parameter
a
=25 C unless otherwise noted
KSA931
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
= -100 A, I
= -10mA, I
= -100 A, I
= -500mA, I
= -500mA, I
= -5V, I
= -60V, I
= -2V, I
= -10V, I
= -10V, I
Test Condition
C
C
B
E
=0
= -50mA
C
E
E
C
=0
=0
B
B
= -50mA
=0, f=1MHz
=0
=0
= -50mA
= -50mA
70 ~ 140
O
1. Emitter 2. Collector 3. Base
1
Min.
-80
-60
40
-8
-55 ~ 150
Ratings
-700
150
-80
-60
-8
1
Typ.
-0.3
-0.9
100
13
120 ~ 240
TO-92L
Max.
-0.1
-0.1
240
-0.7
-1.2
Y
Rev. A2, September 2002
Units
mA
W
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A
Related parts for KSA931
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
KSA931 Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Productor T C Output Capacitance ob * Pulse Test: PW 350 s, Duty cycle 2% h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSA931 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA, I ...
Page 2
... COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10000 -1000 *200ms -100 Single Pulse -10 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 = -1 -1 -0.8 A 100 - ...
Page 3
... Package Dimensions 0.50 0.10 ©2002 Fairchild Semiconductor Corporation TO-92L 4.90 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 3.90 0.20 0.45 0.10 Dimensions in Millimeters Rev. A2, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...