KSB1015 Fairchild Semiconductor, KSB1015 Datasheet

no-image

KSB1015

Manufacturer Part Number
KSB1015
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSB1015YTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Collector Emitter Saturation Voltage
• Complement to KSD1406
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
BV
I
I
h
h
V
V
f
C
t
t
t
C
B
CBO
EBO
T
ON
STG
F
FE
J
STG
FE1
FE2
CBO
CEO
EBO
C
CE
BE
Symbol
ob
CEO
(on)
(sat)
Symbol
Classification
Classification
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
C
T
=25 C)
C
Parameter
=25 C unless otherwise noted
KSB1015
60 ~ 120
I
V
V
V
V
I
V
V
V
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= - 50mA, I
= - 3A, I
= 30
O
= -I
= - 7V, I
= - 60V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 10V, f = 1MHz
= - 30V, I
Test Condition
B2
= -0.2A
B
C
= - 0.3A
C
C
C
C
B
E
C
= 0
= - 0.5A
= - 3A
= - 0.5A
= - 0.5A
= 0
= 0
= - 1A
1
1.Base
Min.
- 60
60
20
- 55 ~ 150
Value
2.Collector
- 0.5
- 60
- 60
150
- 7
- 3
25
- 0.5
- 0.7
Typ.
150
100 ~ 200
0.4
1.7
0.5
9
TO-220F
Y
Max.
- 100
- 100
200
- 1
- 1
3.Emitter
Rev. A, February 2000
Units
W
V
V
V
A
A
Units
C
C
MHz
pF
V
V
V
A
A
s
s
s

Related parts for KSB1015

KSB1015 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSB1015 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition 50mA 60V ...

Page 2

... Figure 1. Static Characteristic -10 -1 -0.1 -0.01 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage -10 I max(pulse max(DC -0.1 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1k 100 I = -60mA -50mA -40mA -30mA -20mA -10mA ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

Related keywords