KSC1009 Fairchild Semiconductor, KSC1009 Datasheet
KSC1009
Manufacturer Part Number
KSC1009
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC1009.pdf
(4 pages)
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©2001 Fairchild Semiconductor Corporation
High Voltage Amplifier
• High Collector-Base Voltage : V
• Collector Current : I
• Collector Power Dissipation : P
• Complement to KSA709
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
=700mA
Parameter
C
CBO
=800mW
=160V
40 ~ 80
T
a
R
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSC1009
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
=10 A, I
=100 A, I
=10mA, I
=200mA, I
=200mA, I
=5V, I
=60V, I
=2V, I
=10V, I
=10V, I
Test Condition
70 ~ 140
C
C
O
C
B
E
=0
C
E
=50mA
=0
E
=0
=0
=0, f=1MHz
B
B
=50mA
=0
=20mA
=20mA
120 ~ 240
1. Emitter 2. Base 3. Collector
1
Min.
160
140
40
30
8
Y
-55 ~ 150
Ratings
160
140
700
800
150
8
Typ.
0.86
0.2
50
8
TO-92
Max.
400
200 ~ 400
0.1
0.1
0.7
1.0
G
Units
mW
Rev. A1, June 2001
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A
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KSC1009 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSC1009 =160V T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...
Page 2
... (sat) CE 0.1 0. [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation 1000 I =0.4mA B 100 10 I =0.2mA 1000 I =10I C B 100 10 1 100 1000 0 ...
Page 3
... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...