KSC1675 Fairchild Semiconductor, KSC1675 Datasheet

no-image

KSC1675

Manufacturer Part Number
KSC1675
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSC1675-Y
Manufacturer:
SAMSUNG/
Quantity:
6 883
Part Number:
KSC1675C-Y
Quantity:
676
©2002 Fairchild Semiconductor Corporation
FM/AM RF AMP, MIX, CONV,OSC,IF
• Collector-Base Voltage : V
• High Current Gain Bandwidth Product : f
• Low Collector Capacitance : C
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
TJ
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
STG
CBO
CEO
EBO
C
BE
CE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CEO
=30V
OB
=2.0pF (TYP.)
T
T
a
=25 C unless otherwise noted
=300MHz (TYP.)
T
Parameter
40 ~ 80
a
=25 C unless otherwise noted
R
KSC1675
I
I
I
V
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=10 A, I
=10 A, I
=5mA, I
=10mA, I
=5V, I
=50V, I
=6V, I
=6V, I
=6V, I
=6V, I
Test Condition
B
C
C
C
C
E
C
E
=0
E
=0
B
=0, f=1MHz
=1mA
=1mA
=1mA
=0
=0
=0
=1mA
70 ~ 140
O
1. Emitter 2. Base 3. Collector
1
Min.
150
50
30
40
5
-55 ~ 150
Value
250
150
50
30
50
5
Typ.
0.67
0.08
300
2.0
TO-92
120 ~ 240
Max.
0.75
240
0.1
0.1
0.3
2.5
Y
Rev. A2, September 2002
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A

Related parts for KSC1675

KSC1675 Summary of contents

Page 1

... BE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC1675 =300MHz (TYP.) T =2.0pF (TYP.) T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =5mA, I ...

Page 2

... BE 0.1 V (sat) CE 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 0 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Input Output Capacitance ©2002 Fairchild Semiconductor Corporation 10000 1000 100 ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords