KSC5042 Fairchild Semiconductor, KSC5042 Datasheet

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KSC5042

Manufacturer Part Number
KSC5042
Description
NPN Triple Diffused Planar Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BV
• Small C
• Wide S.O.A
• High reliability
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW = 300 s, Duty Cycle = 2% pulsed
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
V
V
C
C
CP
CBO
EBO
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
Symbol
Symbol
CBO
CEO
EBO
(sat)
(sat)
ob
=2.8pF(Typ.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
CEO
KSC5042
=900V
I
I
I
V
V
V
I
I
V
C
C
E
C
C
CB
EB
CE
CB
=1mA, I
=1mA, I
=5mA, I
=20mA, I
=20mA, I
=4V, I
=900V, I
=5V, I
=100V, f = 1MHz
Test Condition
C
E
B
C
C
B
B
= 0
= 0
= 0
= 0
= 10mA
E
= 4mA
= 4mA
= 0
1.Base
1
1500
Min.
900
30
5
- 55 ~ 150
Value
2.Collector
1500
900
100
300
150
10
5
Typ.
2.8
TO-220
Max.
3.Emitter
10
10
5
2
Rev. A1, June 2001
Units
mA
mA
W
Units
V
V
V
C
C
pF
V
V
V
V
V
A
A

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KSC5042 Summary of contents

Page 1

... Current Gain FE V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE C Output Capacitance ob * Pulse test 300 s, Duty Cycle = 2% pulsed ©2001 Fairchild Semiconductor Corporation KSC5042 =900V CEO T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =1mA, I ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage I (Pulse MAX C 100 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation I = 6mA 5mA 100 4mA 3mA 2mA 1mA ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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