KSD1406 Fairchild Semiconductor, KSD1406 Datasheet

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KSD1406

Manufacturer Part Number
KSD1406
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
I
P
T
T
I
h
h
C
t
t
t
V
V
V
BV
I
V
V
f
FE1
C
B
EBO
ON
STG
F
CBO
T
J
STG
FE2
C
CBO
CEO
EBO
CE
BE
ob
Symbol
FE1
Symbol
CEO
(on)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
60 ~ 120
=25 C unless otherwise noted
Parameter
T
C
O
=25 C unless otherwise noted
KSD1406
I
V
V
V
V
I
V
V
V
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= 50mA, I
= 3A, I
= 30
= -I
Test Condition
= 60V, I
= 7V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 30V, I
B2
100 ~ 200
B
= 0.2A
C
= 0.3A
C
C
C
C
E
B
C
= 0
= 0.5A
= 3A
= 0.5A
= 0.5A
Y
= 0
= 0
= 1A
1
1.Base
Min.
60
60
20
- 55 ~ 150
2.Collector
Value
150
0.5
60
60
25
3
7
TO-220F
Typ.
0.4
0.7
0.8
1.5
0.8
70
3
150 ~ 300
G
3.Emitter
Max.
100
100
300
1
1
Rev. A, February 2000
Units
W
V
V
V
A
A
Units
C
C
MHz
pF
V
V
V
A
A
s
s
s

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KSD1406 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time STG t Fall Time F h Classification FE1 Classification h FE1 ©2000 Fairchild Semiconductor International KSD1406 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 50mA 60V ...

Page 2

... Figure 1. Static Characteristic 10 1 0.1 0.01 0.001 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10 I max(pulse (max 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 = 40mA I = 30mA 20mA 10mA 0mA ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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