KSD1406 Fairchild Semiconductor, KSD1406 Datasheet
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Manufacturer Part Number
KSD1406
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Available stocks
Manufacturer:
FAIRCHILD/仙童
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
I
P
T
T
I
h
h
C
t
t
t
V
V
V
BV
I
V
V
f
FE1
C
B
EBO
ON
STG
F
CBO
T
J
STG
FE2
C
CBO
CEO
EBO
CE
BE
ob
Symbol
FE1
Symbol
CEO
(on)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
60 ~ 120
=25 C unless otherwise noted
Parameter
T
C
O
=25 C unless otherwise noted
KSD1406
I
V
V
V
V
I
V
V
V
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= 50mA, I
= 3A, I
= 30
= -I
Test Condition
= 60V, I
= 7V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 30V, I
B2
100 ~ 200
B
= 0.2A
C
= 0.3A
C
C
C
C
E
B
C
= 0
= 0.5A
= 3A
= 0.5A
= 0.5A
Y
= 0
= 0
= 1A
1
1.Base
Min.
60
60
20
- 55 ~ 150
2.Collector
Value
150
0.5
60
60
25
3
7
TO-220F
Typ.
0.4
0.7
0.8
1.5
0.8
70
3
150 ~ 300
G
3.Emitter
Max.
100
100
300
1
1
Rev. A, February 2000
Units
W
V
V
V
A
A
Units
C
C
MHz
pF
V
V
V
A
A
s
s
s
Related parts for KSD1406
KSD1406 Summary of contents
... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time STG t Fall Time F h Classification FE1 Classification h FE1 ©2000 Fairchild Semiconductor International KSD1406 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 50mA 60V ...
... Figure 1. Static Characteristic 10 1 0.1 0.01 0.001 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10 I max(pulse (max 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 = 40mA I = 30mA 20mA 10mA 0mA ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...
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