KSD560 Fairchild Semiconductor, KSD560 Datasheet

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KSD560

Manufacturer Part Number
KSD560
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSD560Y
Manufacturer:
FAIRCHILD
Quantity:
2 544
Part Number:
KSD560YTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
• Complement to KSB601
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
I
I
P
V
V
V
I
P
T
T
I
h
h
V
V
t
t
f
FE
CP
B
C
CBO
ON
STG
T
Symbol
FE1
FE2
C
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
(sat)
(sat)
Classification
Classification
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter SaturationVoltage
Collector Cut-off Current
Turn ON Time
Storage Time
Fall Time
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE1
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
2000 ~ 5000
C
=25 C unless otherwise noted
R
KSD560
V
I
I
I
R
V
V
V
C
C
B1
CB
CE
CE
CC
L
= 3A, I
= 3A, I
= 16.7
= - I
= 100V, I
= 2V, I
= 2V, I
= 50V, I
Test Condition
B2
B
B
= 3mA
= 3mA
= 3mA
C
C
= 3A
= 5A
C
E
= 3A
= 0
3000 ~ 7000
O
1.Base
1
Min.
500
2K
- 55 ~ 150
2.Collector
Value
150
100
150
0.5
1.5
30
5
8
7
Typ.
6K
0.9
1.6
3.5
1.2
TO-220
1
5000 ~ 15000
Max.
15K
Y
3.Emitter
1.5
1
2
Rev. A, February 2000
Units
W
W
V
V
V
A
A
A
Units
C
C
V
V
A
s
s
s

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KSD560 Summary of contents

Page 1

... SaturationVoltage BE t Turn ON Time ON t Storage Time STG f Fall Time T * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSD560 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition V = 100V ...

Page 2

... CE 0.1 0 [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2000 Fairchild Semiconductor International 10000 I = 0.5mA B 1000 I = 0.4mA 0.35mA B 100 I = 0.3mA 1000 0.1 0.01 ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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