KSD880 Fairchild Semiconductor, KSD880 Datasheet
KSD880
Manufacturer Part Number
KSD880
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSD880.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSD880-Y
Manufacturer:
TOSHIBA
Quantity:
2 000
Company:
Part Number:
KSD880Y
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Complement to KSB834
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
BV
V
V
V
I
P
T
T
I
I
h
h
V
V
f
C
t
t
t
FE
B
C
CBO
EBO
T
ON
STG
F
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
ob
Symbol
CEO
(on)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
60 ~ 120
=25 C unless otherwise noted
Parameter
T
O
C
=25 C unless otherwise noted
KSD880
V
V
I
V
V
I
V
V
V
V
I
R
C
C
B1
CB
CB
EB
CE
CE
CE
CE
CC
L
= 50mA, I
= 3A, I
= 30
= - I
= 60V, I
= 7V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 30V, I
Test Condition
B2
B
= 0.2A
= 0.3A
C
C
C
C
C
E
E
B
C
= 0
= 0.5A
= 3A
= 0.5A
= 0.5A
= 0, f = 1MHz
100 ~ 200
= 0
= 0
= 1A
Y
1.Base
1
Min.
60
60
20
- 55 ~ 150
2.Collector
Value
150
0.3
60
60
30
3
7
Typ.
0.4
0.7
0.8
1.5
0.8
70
TO-220
3
150 ~ 300
G
Max.
100
100
300
3.Emitter
1
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
MHz
C
C
pF
V
V
V
A
A
s
s
s
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KSD880 Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSD880 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition V = 60V 7V ...
Page 2
... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 10 I (Pulse) MAX (Continous) MAX 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 = 50mA = 40mA B 100 I = 30mA 20mA 10mA 0. 0.1 ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...