KSD986 Fairchild Semiconductor, KSD986 Datasheet

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KSD986

Manufacturer Part Number
KSD986
Description
Ksd985/986 Npn Epitaxial Silicon Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
* PW 300 s, Duty Cycle10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%
h
I
I
P
I
I
V
V
V
I
P
T
T
I
I
I
h
h
V
V
t
t
t
FE
Symbol
CP
B
CEX1
EBO
C
CBO
CER
CEX2
ON
STG
F
FE1
FE2
C
J
STG
Symbol
CBO
CEO
EBO
C
CE
BE
(sat)
(sat)
Classification
Classification
Collector-Emitter Volage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
h
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Turn ON Time
Storage Time
Fall Time
FE2
Parameter
Parameter
a
C
=25 C)
=25 C)
T
: KSD985
: KSD986
C
=25 C unless otherwise noted
T
2000 ~ 5000
C
KSD985/986
=25 C unless otherwise noted
R
- 55 ~ 150
@ T
V
@ T
V
V
V
I
I
V
I
R
V
V
V
Value
C
C
B1
0.15
CB
CE
CE
CE
EB
CE
CE
CC
L
150
150
8.0
1.5
3.0
1.0
= 1A, I
= 1A, I
10
60
80
= 50
= - I
C
= 60V, V
C
= 60V, I
= 60V, R
= 60V, V
= 5V, I
= 2V, I
= 2V, I
= 50V, I
Test Condition
= 125 C
= 125 C
B2
B
B
= 1mA
C
= 1mA
= 1mA
C
C
E
C
= 0
BE
= 0.5A
= 1A
BE
Units
BE
= 0
= 1A
W
W
V
V
V
V
A
A
A
(off) = -1.5A
(off) = -1.5A
C
C
= 51
4000 ~ 10000
O
1
1. Emitter
1000
2000
Min.
2.Collector
Typ.
0.5
1.0
1.0
8000 ~ 30000
TO-126
30000
Max.
1.5
2.0
1.0
1.0
1.0
Y
10
10
3.Base
Rev. A, February 2000
Units
mA
mA
mA
V
V
A
A
s
s
s

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KSD986 Summary of contents

Page 1

... Storage Time STG t Fall Time F * Pulse Test: PW 350 s, Duty Cycle 2% h Classification FE Classification h FE2 ©2000 Fairchild Semiconductor International KSD985/986 T =25 C unless otherwise noted C Value Units 150 V : KSD985 KSD986 80 V 8.0 V 1.5 A 3.0 A 0.15 A = 150 150 C T =25 C unless otherwise noted ...

Page 2

... CE 0.1 0 [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Reverse Bias Safe Operating Areas ©2000 Fairchild Semiconductor International 10000 I = 160uA 140uA 120uA 100uA B 1000 I = 80uA B 100 3.0 3.5 4.0 4.5 5.0 0.01 160 I = 1000 ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2000 Fairchild Semiconductor International (Continued) 125 150 175 Rev. A, February 2000 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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