KSP56 Fairchild Semiconductor, KSP56 Datasheet
KSP56
Manufacturer Part Number
KSP56
Description
Ksp55/56 Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSP56.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSP56TA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KSP05/06
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
BV
I
I
h
V
V
f
C
CBO
CEO
T
Symbol
J
STG
CBO
CEO
CEO
C
CE
BE
FE
CEO
EBO
Symbol
(on)
(sat)
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CEO
Parameter
C
=KSP55: 60V
(max) =625mW
KSP56: 80V
: KSP55
: KSP55
: KSP56
: KSP56
T
a
=25 C unless otherwise noted
T
Parameter
: KSP55
: KSP56
: KSP55
: KSP56
a
=25 C unless otherwise noted
KSP55/56
I
I
V
V
V
V
V
I
V
V
f=100MHz
C
E
C
CB
CB
CE
CE
CE
CE
CE
= -1mA, I
= -100 A, I
= -100mA, I
= -60V, I
= -80V, I
= -60V, I
= -1V, I
= -1V, I
= -1V, I
= -2V, I
Test Condition
B
C
C
C
C
=0
E
E
B
= -10mA
= -100mA
= -100mA
= -10mA
C
=0
=0
=0
B
=0
= -10mA
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
-500
625
150
-60
-80
-60
-80
-4
Min.
-60
-80
50
50
50
-4
TO-92
Max.
-0.25
-0.1
-0.1
-0.1
-1.2
Rev. A2, September 2002
Units
mW
mA
V
V
V
V
V
C
C
Units
MHz
V
V
V
V
A
A
A
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KSP56 Summary of contents
Page 1
... C unless otherwise noted a Parameter : KSP55 : KSP56 : KSP55 : KSP56 T =25 C unless otherwise noted a Test Condition : KSP55 I = -1mA KSP56 I = -100 KSP55 V = -60V KSP56 V = -80V -60V -1V -10mA -1V -100mA -100mA -1V -100mA CE ...
Page 2
... Typical Characteristics 1000 100 10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain -1000 -100 -10 -1 -0.0 -0.2 -0.4 -0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation - - -0.1 -0.01 -100 -1000 -1 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 V = -1V CE 100 10 -0.8 -1.0 -1.2 -1 Figure 4. Current Gain Bandwidth Product ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...