M29W400 ST Microelectronics, M29W400 Datasheet

no-image

M29W400

Manufacturer Part Number
M29W400
Description
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Manufacturer
ST Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W4000DB-70N
Manufacturer:
ST
0
Part Number:
M29W4001-120N1
Manufacturer:
NEC
Quantity:
1 131
Part Number:
M29W4001-120N1
Manufacturer:
ST
Quantity:
1 000
Part Number:
M29W4001-120N1
Manufacturer:
ST
0
Part Number:
M29W400B
Manufacturer:
ST
0
Part Number:
M29W400B-100N1
Manufacturer:
ST
0
Part Number:
M29W400B-70N6
Manufacturer:
ST
Quantity:
832
Part Number:
M29W400BB
Manufacturer:
ROMH
Quantity:
10 000
Part Number:
M29W400BB-55N3
Manufacturer:
ST
Quantity:
190
DESCRIPTION
The M29W400 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 2.7V to 3.6V V
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
November 1999
This is information on a product still in productionbut not recommended for new designs.
respectively by the M29W400BT and
M29W400BB
PROGRAM, ERASE and READ OPERATIONS
– 10 s by Byte / 16 s by Word typical
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
UNPROTECTION MODES
– Read and Program another Block during
– Stand-by and Automatic Stand-by
BLOCK
– Defectivity below 1ppm/year
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh
M29W400T and M29W400B are replaced
2.7V to 3.6V SUPPLY VOLTAGE for
FAST ACCESS TIME: 90ns
FAST PROGRAMMING TIME
PROGRAM/ERASE CONTROLLER (P/E.C.)
MEMORY BLOCKS
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
20 YEARS DATA RETENTION
ELECTRONIC SIGNATURE
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
CC
Figure 1. Logic Diagram
A0-A17
TSOP48 (N)
RP
12 x 20 mm
W
G
E
18
8 x 6 solder balls
V CC
M29W400T
M29W400B
FBGA48 (ZA)
V SS
BGA
M29W400B
M29W400T
NOT FOR NEW DESIGN
44
15
SO44 (M)
1
DQ0-DQ14
DQ15A–1
BYTE
RB
AI02065
1/34

Related parts for M29W400

M29W400 Summary of contents

Page 1

... Manufacturer Code: 0020h – Device Code, M29W400T: 00EEh – Device Code, M29W400B: 00EFh DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Word- by-Word basis using only a single 2.7V to 3.6V V supply. For Program and Erase operations the necessary high voltages are generated internally ...

Page 2

... M29W400T, M29W400B Figure 2A. TSOP Pin Connections A15 1 48 A14 A13 A12 A11 A10 M29W400T M29W400B (Normal A17 AI02066 Warning Not Connected. Figure 2C. SO Pin Connections A17 ...

Page 3

... CommandInterface using standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm), SO44 and FBGA48 ( balls, 0.8mm pitch) packages. Both normal and reverse pinouts are available for the TSOP48 package. M29W400T, M29W400B A–1 DQ6 DQ4 ...

Page 4

... KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWords and seven Main Blocks of 64 KBytes or 32 KWords. The M29W400T has the Boot Block at the top of the memory address space and the M29W400B locates the Boot Block starting at the bottom ...

Page 5

... Table 3A. M29W400T Block Address Table Address Range (x8) Address Range (x16) 00000h-0FFFFh 00000h-07FFFh 10000h-1FFFFh 08000h-0FFFFh 20000h-2FFFFh 10000h-17FFFh 30000h-3FFFFh 18000h-1FFFFh 40000h-4FFFFh 20000h-27FFFh 50000h-5FFFFh 28000h-2FFFFh 60000h-6FFFFh 30000h-37FFFh 70000h-77FFFh 38000h-3BFFFh 78000h-79FFFh 3C000h-3CFFFh 7A000h-7BFFFh 3D000h-3DFFFh 7C000h-7FFFFh 3E000h-3FFFFh Table 3B. M29W400B Block Address Table Address Range (x8) Address Range (x16) ...

Page 6

... M29W400T, M29W400B Command Interface Instructions, made up of commands written in cy- cles, can be given to the Program/Erase Controller through a Command Interface (C.I.). For added data protection, program or erase execution starts after cycles. The first, second, fourth and fifth cycles are used to input Coded cycles to the C.I. ...

Page 7

... The manufacturer ’s code for STMi- after the PHEL croelectronics is 20h, the device code is EEh for the M29W400T (Top Boot) and EFh for the M29W400B(Bottom Boot). These codes allow pro gramming equipment or applications to automat- ically match their interface to the characteristics of the M29W400 ...

Page 8

... M29W400T, M29W400B (1) Table 4. User Bus Operations Operation Read Word Read Byte Write Word Write Byte Output Disable Standby ...

Page 9

... ID Instructions are initialised by two initial Coded cy- cles which unlock the Command Interface. In addi- tion, for Erase, instruction confirmation is again preceded by the two Coded cycles. M29W400T, M29W400B . When RP is returned The Block Unprotection IH . Aftera delay ...

Page 10

... M29W400T, M29W400B (1) Table 8. Instructions Mne. Instr. Cyc. (3,7) Addr. 1+ Data Read/Reset (2,4) RD Memory Array (3,7) Addr. 3+ Data (3,7) Addr. (4) AS Auto Select 3+ Data (3,7) Addr. PG Program 4 Data (3,7) Addr. BE Block Erase 6 Data (3,7) Addr. CE Chip Erase 6 Data (3,7) Addr. Erase (10 Suspend Data (3,7) Addr. Erase ER 1 Resume Data Notes: 1. Commands not interpreted in this table will default to read array mode. ...

Page 11

... DQ7 will output ’1’ if the read is attempted on a blockbeing erasedand the data value on other blocks. During Program operation in Erase Sus- pend Mode, DQ7 will have the same behaviour as in the normal program execution outside of the suspend mode. M29W400T, M29W400B Note 11/34 ...

Page 12

... M29W400T, M29W400B Table 10. Polling and Toggle Bits Mode DQ7 DQ6 Program DQ7 Toggle Erase 0 Toggle Erase Suspend Read (in Erase Suspend 1 block) Erase Suspend Read (outside Erase Suspend DQ7 DQ6 block) Erase Suspend Program DQ7 Toggle Note: 1. Toggle if the address is within a block being erased. ...

Page 13

... 6MHz 0.2V CC Byte program, Block or Chip Erase in progress –0.5 0 4mA –100 A V –0. 11 2.0 M29W400T, M29W400B 1N914 3.3k OUT 30pF or 100pF AI01968 Max Unit Max Unit ...

Page 14

... BYTE Switching High to Output t t BHQV FHQV Valid Notes: 1. Sampled only, not 100% tested may be delayed ELQV GLQV considered only if the Reset pulse is given while the memory is in Erase or Program mode. 14/34 M29W400T / M29W400B -90 Test Condition V = 3. 30pF L Min Max ...

Page 15

... BHQV FHQV Valid Notes: 1. Sampled only, not 100% tested may be delayed ELQV GLQV considered only if the Reset pulse is given while the memory is in Erase or Program mode. M29W400T / M29W400B Test -120 Condition V = 2. Min 120 ...

Page 16

... M29W400T, M29W400B Figure 6. Read Mode AC Waveforms 16/34 ...

Page 17

... Byte-wide configuration or to address 5555h in the Word-wide configurationon the third cycle after two Coded cycles. A fourth write operation latches the Address on the falling edge and the Data to be written on the rising edge and starts the M29W400T, M29W400B M29W400T / M29W400B -90 -100 V = 3. ...

Page 18

... Erase Confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without further Coded cy- cles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for 18/34 M29W400T / M29W400B -120 -150 V = 2. 2.7V to 3.6V ...

Page 19

... In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. Chip Erase(CE) Instruction. This instructionuses six write cycles. The Erase Set-up command 80h is written to address AAAAh in the Byte-wide con- figuration or the address 5555h in the Word-wide M29W400T, M29W400B tAVAV VALID tWLAX tWHEH tWHGL tWLWH ...

Page 20

... Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended.The Toggle bits will stop toggling between0.1 s and 15 s after the Erase Suspend (ES) command has been writ- 20/34 M29W400T / M29W400B - 3. 30pF ...

Page 21

... Coded cycles. POWER SUPPLY Power Up The memory Command Interfaceis reset on power up to Read Array. Either must be tied to V M29W400T / M29W400B -120 V = 2.7V to 3.6V CC Min Max 120 ...

Page 22

... M29W400T, M29W400B Figure 8. Write AC Waveforms, E Controlled A0-A17/ A–1 tAVEL W tWLEL G tGHEL E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related 22/34 tAVAV VALID tELAX tEHWH ...

Page 23

... L L Min Max Min Max 10 2400 10 2400 1 2400 10 2400 1 2400 10 2400 1 2400 10 2400 1.0 30 1.0 30 (1) M29W400T / M29W400B -120 -150 V = 2. 2. Min Max Min Max 10 2400 10 2400 1 2400 10 2400 1 2400 10 2400 1 2400 10 2400 1 ...

Page 24

... M29W400T, M29W400B Figure 10. Data Polling DQ7 AC Waveforms 24/34 ...

Page 25

... Parameter Block Erase Main Block (32Kb) Erase Main Block (64Kb) Erase Chip Program (Byte) Byte Program Word Program Program/Erase Cycles (per Block) Figure 12. Data Toggle Flowchart DQ2, DQ5 & DQ6 NO READ DQ2, DQ6 PASS AI01369 M29W400T / M29W400B Min Typ 1.5 6.7 0.7 0.6 0.9 1.4 7 100,000 ...

Page 26

... M29W400T, M29W400B Figure 13. Data Toggle DQ6, DQ2 AC Waveforms 26/34 ...

Page 27

... A12-A17 Wait Wait 100 A12-A17 IDENTIFY BLOCK Wait Wait 60ns VERIFY BLOCK PROTECT STATUS NO DATA = 01h YES ++ PASS YES FAIL AI01875E M29W400T, M29W400B NO 27/34 ...

Page 28

... M29W400T, M29W400B Figure 15. All Blocks Unprotecting Flowchart NO ++n = 1000 YES FAIL 28/34 START PROTECT ALL BLOCKS Set- A12, A15 = V IH Wait Wait 10ms Unprotect Verify A1 A12-A17 IDENTIFY BLOCK ...

Page 29

... M29W400T and M29W400B are replaced respectively by the new version M29W400BT and M29W400BB Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options(Speed, Package,etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you ...

Page 30

... M29W400T, M29W400B TSOP48 Normal Pinout - 48 lead Plastic Thin Small Outline 20mm Symb Typ A A1 0.05 A2 0.95 B 0.17 C 0.10 D 19.80 D1 18.30 E 11.90 e 0. DIE TSOP-a Drawing is not to scale. 30/34 mm Min Max Typ 1.20 0.15 1.05 0.27 0.21 20.20 18.50 12. 0.020 0. 0. inches Min Max 0.047 0.002 0.006 0.037 ...

Page 31

... DIE TSOP-b Drawing is not to scale. mm Min Max Typ 1.20 0.15 1.05 0.27 0.21 20.20 18.50 12.10 – – 0.020 0. 0. M29W400T, M29W400B inches Min Max 0.047 0.002 0.006 0.037 0.041 0.007 0.011 0.004 0.008 0.780 0.795 0.720 0.728 0.469 0.476 – – 0.020 0.028 0.004 A2 ...

Page 32

... M29W400T, M29W400B SO44 - 44 lead Plastic Small Outline, 525 mils body width Symb Typ A 2.42 A1 0. 0.10 D 28.10 E 13.20 e 1.27 H 15. SO-b Drawing is not to scale. 32/34 mm Min Max Typ 2.62 0.23 2.35 0.50 0.25 28.30 13.40 0.050 16.10 0.031 inches Min Max 0.095 0.103 0.009 0.010 ...

Page 33

... BALL ”A1” M29W400T, M29W400B inches Min Max 0.045 0.053 0.010 0.014 – – 0.014 0.018 0.006 0.346 0.362 – – – – 0.228 0.244 – ...

Page 34

... M29W400T, M29W400B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords