m29w400d Numonyx, m29w400d Datasheet
m29w400d
Manufacturer Part Number
m29w400d
Description
4 Mbit 512 Kb X 8 Or 256 Kb X 16, Boot Block 3 V Supply Flash Memory
Manufacturer
Numonyx
Datasheet
1.M29W400D.pdf
(48 pages)
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Features
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December 2007
Supply voltage
– V
Access time: 45, 55, 70 ns
Programming time
– 10 µs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– ECOPACK
and Read
Erase Suspend
CC
= 2.7 V to 3.6 V for Program, Erase
®
packages
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
Rev 6
1. These packages are no more in mass production.
3 V supply Flash memory
TFBGA48 (ZA)
TFBGA48 (ZE)
TSOP48 (N)
SO44 (M)
12 x 20 mm
6 x 9 mm
6 x 8 mm
M29W400DB
M29W400DT
FBGA
FBGA
(1)
(1)
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