Switching Diodes
MA4X160
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
■ Absolute Maximum Ratings T
Note) * : t = 1 s
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
Publication date: November 2003
• Two isolated elements are contained in one package, allowing
• Centrosymmetrical wiring, allowing to free from the taping direction
• Short reverse recovery time t
• Small terminal capacitance C
Reverse voltage
Maximum peak reverse voltage
Forward current
(Average)
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
high-density mounting
2. Absolute frequency of input and output is 100 MHz.
3. * : t
Parameter
Parameter
rr
Pulse Generator
(PG-10N)
R
s
measurement circuit
= 50 Ω
Bias Application Unit N-50BU
*
Double
Double
Single
Single
Single
Double
*
A
Wave Form Analyzer
(SAS-8130)
R
(MA160)
i
= 50 Ω
rr
t
Symbol
I
V
I
I
F(AV)
T
V
FRM
FSM
T
RM
stg
R
a
j
Symbol
= 25°C ± 3°C
V
V
C
I
t
a
R
rr
R
F
t
= 25°C
−55 to +150
Rating
100
225
170
500
375
150
40
40
75
I
I
V
V
I
I
F
R
F
rr
Note) The part number in the parenthesis shows conventional part number.
V
R
R
= 100 mA
= 10 mA, V
= 100 µA
= 0.1 I
R
SKF00044AED
= 35 V
= 0 V, f = 1 MHz
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
R
= 0.35 ns
= 2 µs
Unit
, R
mA
mA
mA
t
°C
°C
p
V
V
Conditions
L
R
= 100 Ω
= 6 V
t
I
F
I
V
R
Output Pulse
F
L
R
= 10 mA
Marking Symbol: M1D
Internal Connection
= 100 Ω
= 6 V
0.60
EAIJ: SC-61
t
I
rr
rr
(0.2)
+0.10
–0.05
= 0.1 I
10˚
t
R
(0.95)
2.90
3
2
1.9
Min
40
±0.2
+0.02
–0.05
(0.95)
0.5R
3
2
0.95
Typ
0.9
4
1
4
1
Mini4-G1 Package
Max
1.20
0.1
2.0
3
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
0.16
+0.1
–0.06
Unit: mm
Unit
µA
pF
ns
V
V
1