MB85R1001 Fujitsu Microelectronics, Inc., MB85R1001 Datasheet
MB85R1001
Available stocks
Related parts for MB85R1001
MB85R1001 Summary of contents
Page 1
... M Bit (128 K × 8) MB85R1001 DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery. ...
Page 2
... MB85R1001 PIN ASSIGNMENTS N.C. CE2 N.C. VCC N.C. N.C. GND N.C. N.C. VCC N.C. PIN DESCRIPTIONS Pin name A0 to A16 I/O1 to I/O8 CE1 CE2 WE OE VCC GND TOP VIEW 1 A11 A13 A15 A16 18 19 A14 A12 (FPT-48P-M25) ...
Page 3
... CE2 High-Z = High Impedance IH : Latch address at rising edge MB85R1001 S/A I/O 8 · to · I/O 1 I/O to I/O Supply Current 1 8 Standby High Dout Operation ( Din High-Z 3 ...
Page 4
... MB85R1001 ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Input Voltage Output Voltage Ambient Temperature Storage Temperature WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage ...
Page 5
... OUT −0 mA* 1 out −0 −0 ≥ V −0 −2 2 MB85R1001 = 3 3 −20 °C to +85 °C) A Value Unit Min Typ Max 10 µA 10 µA 100 ...
Page 6
... MB85R1001 2. AC CHARACTERISTICS • AC TEST CONDITIONS Supply Voltage : 3 3.6 V Operating Temperature : −20 °C to +85 °C Input Voltage Amplitude : 0 2.7 V Input Rising Time : 10 ns Input Falling Time : 10 ns Input Evaluation Level : 2 0.8 V Output Evaluation Level : 2 0.8 V Output Impedance : 50 pF (1) Read Operation Parameter ...
Page 7
... A Sym- bol Min 0.5 pi Test Condition Min V = GND GND OUT MB85R1001 Value Units Typ Max MHz +25 °C) A Value Unit Typ Max 10 pF ...
Page 8
... MB85R1001 TIMING DIAGRAMS 1. Read Cycle Timing • CE1, CE2 Control CE1 CE2 t AS Valid A0 to A16 I/O1 to I/O8 • OE Control CE1 CE2 t AS Valid A0 to A16 OE I/ CA1 t CE1 t CE2 Valid CA1 t CA2 ...
Page 9
... CE1, CE2 Control CE1 CE2 A16 Valid Data In • WE Control CE1 CE2 A0 to A16 WE OE Data CA1 t CA2 Valid CA1 t CA2 Valid Valid MB85R1001 ...
Page 10
... CE2 ≤ 0.2 V GND CE1 > CE1 * : CE1 (Max) < 0 NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. ORDERING INFOMATION Part number MB85R1001PFTN 10 tpi × 0.8* CE1 : Don't Care Package 48-pin plastic TSOP(1) (FPT-48P-M25) tpu VCC CE2 3.0 V VIH (Min) 1 ...
Page 11
... Details of "A" part "A" +0.05 0.145 –0.03 0.08(.003) +.002 .006 –.001 0.25(.010) Dimensions in mm (inches). Note: The values in parentheses are reference values. MB85R1001 0.10±0.05 (Stand off) (.004±.002) 0.50(.020) +0.05 0.22 –0.04 0.10(.004) M +.002 .009 –.002 1.13±0.07 (Mounting height) (.044± ...
Page 12
... MB85R1001 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...