MC74VHC1G08 Leshan Radio Company, MC74VHC1G08 Datasheet
MC74VHC1G08
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MC74VHC1G08 Summary of contents
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... AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. ...
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... Machine Model (Note 3) Charged Device Model (Note 4) Above V and Below GND at 125°C (Note 5) CC Parameter V = 3.3 ± 0 5.0 ± 0 Time, Years 117.8 47.9 20.4 9.4 4.2 1 2.0 1.0 1 MC74VHC1G08 Value Unit – 0 7.0 V – 0 – 0 –0 0.5 cc – +50 mA 200 ...
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... ± 5.0 0 ± Typical @ 25° CC(OPR • • • LESHAN RADIO COMPANY, LTD. MC74VHC1G08 = 25°C T < 85°C –55°C<T <125° Max Min Max Min Max 1.5 1.5 2.1 2.1 3.15 3.15 3.85 3.85 0.5 0.5 0.5 0.9 0.9 0.9 1.35 1.35 1.35 1.65 1.65 1.65 2.0 1.9 1.9 3 ...
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... Number Circuit Range Indicator Identifier MC74VHC1G08DFT1 MC 74 MC74VHC1G08DFT2 MC 74 MC74VHC1G08DFT4 MC 74 MC74VHC1G08DTT1 MC 74 MC74VHC1G08DTT3 MC 74 LESHAN RADIO COMPANY, LTD. *Includes all probe and jig capacitance Figure 5. Test Circuit Device Nomenclature Device Package Tape and Technology Function Suffix Reel Suffix VHC1G 08 DF ...