MCR12L ONSEMI [ON Semiconductor], MCR12L Datasheet

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MCR12L

Manufacturer Part Number
MCR12L
Description
Silicon Controlled Rectifiers Reverse Blocking Thyristors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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MCR12LD, MCR12LM,
MCR12LN
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
December, 2005 − Rev. 2
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(180 Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for half−wave ac control applications, such as
Ease of Design
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80 C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
High Immunity to dv/dt − 100 V/msec Minimum at 125 C
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2005
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
J
DRM
= −40 to 125 C, Sine Wave,
and V
C
RRM
1.0 ms, T
= 80 C)
1.0 ms, T
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
C
J
= 80 C)
= 80 C)
= 25 C unless otherwise noted)
C
Preferred Device
= 80 C)
J
MCR12LM
MCR12LD
MCR12LN
= 125 C)
Symbol
I
P
V
V
T(RMS)
I
P
G(AV)
I
T
DRM,
TSM
RRM
I
GM
T
GM
2
stg
J
t
−40 to 125
−40 to 150
Value
400
600
800
100
5.0
0.5
2.0
12
41
1
A
Unit
2
W
W
V
A
A
A
sec
C
C
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
MCR12LNG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
ORDERING INFORMATION
400 thru 800 VOLTS
12 AMPERES RMS
A
Y
WW
x
G
AKA = Diode Polarity
A
http://onsemi.com
CASE 221A−09
PIN ASSIGNMENT
TO−220AB
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
STYLE 3
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SCRs
Publication Order Number:
Cathode
Anode
Anode
Gate
G
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MARKING
DIAGRAM
MCR12LxG
K
AY WW
Shipping
AKA
MCR12L/D

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