MCR8S Motorola, MCR8S Datasheet
MCR8S
Manufacturer Part Number
MCR8S
Description
Silicon Controlled Rectifiers
Manufacturer
Motorola
Datasheet
1.MCR8S.pdf
(2 pages)
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
(1) V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS (T J = 25 C unless otherwise noted)
Motorola Thyristor Device Data
Motorola, Inc. 1995
Peak Repetitive Off-State Voltage (1)
On-State RMS Current
Peak Non-repetitive Surge Current
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width 1.0 s, T C = 80 C)
Average Gate Power (t = 8.3 ms, T C = 80 C)
Peak Gate Current (Pulse Width 1.0 s, T C = 80 C)
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Designed primarily for half–wave ac control applications, such as motor
Blocking Voltage to 800 Volts
On-State Current Rating of 8 Amperes RMS
High Surge Current Capability — 90 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Low Trigger Currents, 200 A Maximum for Direct Driving from Integrated Circuits
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Peak Repetitive Reverse Voltage
(One Half Cycle, 60 Hz, T J = 125 C)
Thermal Resistance
(T J = –40 to 110 C; R GK = 1.0 K )
(All Conduction Angles)
— Junction to Ambient
Parameter
MCR8SD
MCR8SM
MCR8SN
I T(RMS)
Symbol
P G(AV)
V DRM
V RRM
I TSM
R JC
R JA
P GM
I GM
T stg
I 2 t
T J
T L
*Motorola preferred devices
K
8 AMPERES RMS
A
SERIES
MCR8S
G
CASE 221A–06
400 thru 800
(TO-220AB)
– 40 to +150
– 40 to +110
VOLTS
Style 3
SCRs
Value
62.5
400
600
800
260
5.0
0.5
2.0
2.2
90
34
8
Order this document
A
by MCR8S/D
*
A 2 sec
Watts
Watts
Volts
Unit
C/W
A
A
A
C
C
C
1
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MCR8S Summary of contents
Page 1
... CASE 221A–06 Symbol V DRM V RRM MCR8SD MCR8SM MCR8SN I T(RMS) I TSM G(AV stg Order this document by MCR8S/D * SCRs 400 thru 800 VOLTS A (TO-220AB) Style 3 Value Unit Volts 400 600 800 sec 34 5 ...
Page 2
... MCR8S SERIES ELECTRICAL CHARACTERISTICS ( 1.0 K unless otherwise noted) Characteristic OFF CHARACTERISTICS Peak Forward Blocking Current Peak Reverse Blocking Current ( Rated V DRM or V RRM , Gate Open) (1) ON CHARACTERISTICS Peak On-State Voltage ( (2) Gate Trigger Current (Continuous dc 100 ) (3) ...