MJE18004 ON Semiconductor, MJE18004 Datasheet

TRANS PWR NPN 5A 450V TO220AB

MJE18004

Manufacturer Part Number
MJE18004
Description
TRANS PWR NPN 5A 450V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJE18004

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
750mV @ 500mA, 2.5A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 300mA, 5V
Power - Max
75W
Frequency - Transition
13MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE18004OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE18004
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Part Number:
MJE18004G
Manufacturer:
ON-SEMI
Quantity:
162
Part Number:
MJE18004G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJE18004G
Manufacturer:
ON
Quantity:
17 803
MJE18004G, MJF18004G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 9
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
RMS Isolation Voltage (Note 2)
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE/MJF18004G have an applications specific state−of−the−art
Reproducible Parametric Distributions
#E69369
Improved Efficiency Due to Low Base Drive Requirements:
Full Characterization at 125_C
ON Semiconductor Six Sigma Philosophy Provides Tight and
Two Package Choices: Standard TO−220 or Isolated TO−220
MJF18004, Case 221D, is UL Recognized at 3500 V
These Devices are Pb−Free and are RoHS Compliant*
High and Flat DC Current Gain h
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
(for 1 sec, R.H. < 30%, T
Characteristics
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
A
MJE18004
MJE18004
MJE18004
MJF18004
MJF18004
MJF18004
= 25_C)
FE
Symbol
Symbol
T
V
V
V
V
R
R
J
I
I
ISOL
P
CEO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
MJF18004
−65 to 150
Value
1000
4500
3500
1500
0.28
Max
1.65
3.55
62.5
450
260
9.0
5.0
2.0
4.0
0.6
10
75
35
RMS
: File
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
V
1
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy
1
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2
2
3
3
POWER TRANSISTOR
G
A
Y
WW
ORDERING INFORMATION
TO−220 FULLPACK
35 and 75 WATTS
UL RECOGNIZED
CASE 221A−09
5.0 AMPERES
http://onsemi.com
CASE 221D
1000 VOLTS
TO−220AB
STYLE 1
STYLE 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
Publication Order Number:
DIAGRAMS
MARKING
MJE18004G
MJF18004G
MJE18004/D
AYWW
AYWW

Related parts for MJE18004

MJE18004 Summary of contents

Page 1

... MJE18004G, MJF18004G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h ♦ ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

TYPICAL STATIC CHARACTERISTICS 100 T = 125° 20° 25° 0.01 0.10 1. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 2.0 1.5 1.5 A ...

Page 5

TYPICAL SWITCHING CHARACTERISTICS 1800 B(off) C 1600 V = 300 1400 1200 1000 800 600 400 200 ...

Page 6

... J 140 130 120 110 100 FORCED GAIN FE Figure 13. Inductive Fall Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (MJE18004 1.0 DC (MJF18004) 0.1 0.01 10 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 15. Forward Bias Safe Operating Area 1.0 0.8 0.6 0.4 THERMAL 0.2 DERATING 100 T , CASE TEMPERATURE (°C) C Figure 17 ...

Page 7

dyn dyn 90 TIME Figure 18. Dynamic Saturation Voltage Measurements ...

Page 8

... R = 1.25°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk 1000 10000 ) for MJE18004 R (t) = r(t) R qJC qJC R = 3.12°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk) ...

Page 9

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom- . ...

Page 10

PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. SEATING −T− 2. CONTROLLING DIMENSION: INCH. ...

Page 11

... BSC 5.08 BSC Q 0.124 0.128 3.15 3.25 R 0.099 0.103 2.51 2.62 S 0.101 0.113 2.57 2.87 U 0.238 0.258 6.06 6.56 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE18004/D ...

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