MJE5740 ON Semiconductor, MJE5740 Datasheet
MJE5740
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MJE5740 Summary of contents
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... MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • These Devices are Pb−Free and are RoHS Compliant* Applications • Small Engine Ignition • Switching Regulators • ...
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... Device MJE5740G MJE5742G (T = 25_C unless otherwise noted) C Î Î Î Î Î Î Î Î Î Î Î Î MJE5740 MJE5742 Î Î Î Î = 1.5 Vdc) Î Î Î Î Î Î Î Î BE(off) = 100_C) C Î Î Î Î ...
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SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 100 T , CASE TEMPERATURE (°C) C Figure 1. Power Derating 2000 150°C 1000 25°C - 55°C 100 ...
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Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N493 0.001 2N222 W 1 DUTY CYCLE ≤ 10 ≤ ...
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... MJE5740 0 100 200 400 0 Figure 7. Reverse Bias Safe Operating Area RESISTIVE SWITCHING PERFORMANCE 250 0.7 0.5 0.3 0 0.2 0.3 http://onsemi.com 5 ≤ MJE5742 MJE5740 100 200 300 400 V , COLLECTOR-EMITTER VOLTAGE (VOLTS 250 0.5 0 COLLECTOR CURRENT (AMPS) C Figure 9. Turn−Off Time 500 B2 ...
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... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE5740/D ...