MMBT6520 N/A, MMBT6520 Datasheet
MMBT6520
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MMBT6520 Summary of contents
Page 1
... Total Device Dissipation Alumina Substrate, ( 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT6520LT1 = 2Z ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I Collector–Base Breakdown Voltage(I Emitter–Base Breakdown Voltage(I Collector Cutoff Current – ...
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... V CE(sat) — — — — V BE(sat) — — — V — BE(on — — eb MMBT6520LT1 Max Unit — — — 200 200 — Vdc –0.30 –0.35 –0.50 –1.0 Vdc –0.75 –0.85 –0.90 –2.0 Vdc 200 MHz 6.0 pF 100 pF M24–2/5 ...
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... T = 25°C J 500 300 200 100 1 100 200 MMBT6520LT1 T = 25° MHz 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA 25°C to 125°C for V VC CE(sat) –55°C to 25°C – ...
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... FOR V = 100 V CE(off 1.0 k 1/2MSD7000 APPROXIMATELY (ADJUST FOR V –1.35 V Figure 8. Switching Time Test Circuit Z = r(t) • R qJC( r(t) • R qJA(t) 5 100 200 t, TIME (ms) Figure 9. Thermal Response MMBT6520LT1 70 100 50 SAMPLING SCOPE 50 = 2.0 V) (BE)off T – qJC J(pk) C (pk) qJC(t) T – qJA J(pk) A (pk) qJA(t) 500 1 ...
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... FIGURE 1/f t DUTY CYCLE = PEAK PULSE POWER = P Design Note: Use of Transient Thermal Resistance Data LESHAN RADIO COMPANY, LTD. MMBT6520LT1 M24–5/5 ...