MMBT6520 N/A, MMBT6520 Datasheet

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MMBT6520

Manufacturer Part Number
MMBT6520
Description
Silicon NPN Transistor
Manufacturer
N/A
Datasheet

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High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
MMBT6520LT1 = 2Z
Collector–Emitter Breakdown Voltage (I
Collector–Base Breakdown Voltage(I
Emitter–Base Breakdown Voltage(I
Collector Cutoff Current( V
Emitter Cutoff Current( V
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
A
= 25°C
Rating
Characteristic
A
EB
= 25°C
CB
= –4.0V )
= –250V )
Symbol
V
V
V
E
I
I
CEO
CBO
EBO
C
= –10 A)
B
E
(T
= –100 A )
A
C
= –1.0 mA )
= 25°C unless otherwise noted.)
1
BASE
Value
–350
–350
–250
–500
–5.0
Symbol
T
J
R
R
P
P
, T
D
D
JA
JA
stg
3
COLLECTOR
2
EMITTER
mAdc
Unit
Vdc
Vdc
Vdc
mA
–55 to +150
Symbol
V
V
V
Max
225
300
417
1.8
556
2.4
I
I
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
–350
–350
Unit
–5.0
mW
mW
Min
°C
MMBT6520LT1
Max
–50
–50
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
2
Unit
Vdc
Vdc
Vdc
nA
nA
3
M24–1/5

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MMBT6520 Summary of contents

Page 1

... Total Device Dissipation Alumina Substrate, ( 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT6520LT1 = 2Z ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I Collector–Base Breakdown Voltage(I Emitter–Base Breakdown Voltage(I Collector Cutoff Current – ...

Page 2

... V CE(sat) — — — — V BE(sat) — — — V — BE(on — — eb MMBT6520LT1 Max Unit — — — 200 200 — Vdc –0.30 –0.35 –0.50 –1.0 Vdc –0.75 –0.85 –0.90 –2.0 Vdc 200 MHz 6.0 pF 100 pF M24–2/5 ...

Page 3

... T = 25°C J 500 300 200 100 1 100 200 MMBT6520LT1 T = 25° MHz 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA 25°C to 125°C for V VC CE(sat) –55°C to 25°C – ...

Page 4

... FOR V = 100 V CE(off 1.0 k 1/2MSD7000 APPROXIMATELY (ADJUST FOR V –1.35 V Figure 8. Switching Time Test Circuit Z = r(t) • R qJC( r(t) • R qJA(t) 5 100 200 t, TIME (ms) Figure 9. Thermal Response MMBT6520LT1 70 100 50 SAMPLING SCOPE 50 = 2.0 V) (BE)off T – qJC J(pk) C (pk) qJC(t) T – qJA J(pk) A (pk) qJA(t) 500 1 ...

Page 5

... FIGURE 1/f t DUTY CYCLE = PEAK PULSE POWER = P Design Note: Use of Transient Thermal Resistance Data LESHAN RADIO COMPANY, LTD. MMBT6520LT1 M24–5/5 ...

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