IRF1404 International Rectifier, IRF1404 Datasheet

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IRF1404

Manufacturer Part Number
IRF1404
Description
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
Manufacturer
International Rectifier
Datasheet

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Description
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Power Dissipation
®
Power MOSFETs from
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
-55 to + 175
D
S
162†
115†
TO-220AB
Max.
650
200
± 20
519
1.3
5.0
95
20
®
R
IRF1404
Power MOSFET
DS(on)
Max.
I
V
0.75
–––
D
62
DSS
= 162A†
= 0.004
PD -91896E
= 40V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
10/20/00

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IRF1404 Summary of contents

Page 1

... S TO-220AB Max. @ 10V 162† 10V 115† 175 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– PD -91896E IRF1404 ® Power MOSFET V = 40V DSS R = 0.004 DS(on 162A† D Units A 650 200 W 1.3 W/°C ± ...

Page 2

... IRF1404 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 100 ° 10 0.1 10 100 Fig 2. Typical Output Characteristics 2 ° 175 C 2.0 J 1.5 1.0 0.5 = 25V 0.0 -60 -40 -20 0 8.0 9.0 Fig 4. Normalized On-Resistance IRF1404 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 159A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRF1404 12000 1MHz iss rss gd 10000 oss ds gd 8000 C iss 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1404 D.U. µ d(off ...

Page 6

... IRF1404 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...

Page 7

... Low Leakage Inductance Current Transformer - „ - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® HEXFET Power MOSFETs IRF1404 + + =10V ...

Page 8

... IRF1404 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

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