mr25h40 Everspin Technologies, Inc, mr25h40 Datasheet
mr25h40
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mr25h40 Summary of contents
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... The MR25H40 is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR25H40 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H40 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. The MR25H40 is available in a small footprint 8-pin DFN package and a 300 mil 8-pin DIP package that is compatible with serial EEPROM, Flash, and FeRAM products. The MR25H40 provides highly reliable data storage over a wide range of temperatures. The product is of- fered with industrial temperature (-40° to +85 °C) options. ...
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... SPI EVERSPIN SPI MRAM 1 Micro Controller CS HOLD CS 1 HOLD HOLD 2 2 MR25H40 512Kb x 8 MRAM ARRAY 8 SO Data I/O Register 4 Nonvolatile Status Register SO SI SCK EVERSPIN SPI MRAM 2 CS HOLD MOSI = Master Out Slave In MISO = Master In Slave Out Document Number: MR25H40 Rev. 2, 1/2011 ...
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... A low on the Hold pin interrupts a memory operation for another task. When HOLD is low, the current operation is suspended. The device will ignore transitions on the CS and SCK when HOLD is low. All transitions of HOLD must occur while CS is low. Power supply voltage from +3.0 to +3.6 volts. 3 Document Number: MR25H40 Rev. 2, 1/2011 MR25H40 HOLD ...
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... B9h 1010 1011 ABh Table 2.2 Status Register Bit Assignments Bit 4 Bit 3 Don’t Care BP1 4 MR25H40 Address Bytes Data Bytes Bit 2 Bit 1 BP0 WEL Document Number: MR25H40 Rev. 2, 1/2011 ∞ ∞ Bit 0 Don’t Care ...
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... Figure 2.1 RDSR MSB 7 MSB 5 MR25H40 Status Register Protected Writable Protected Writable Memory Contents Unprotected Area All Memory Lower Three-Quarters Lower Half None Status Register Out Document Number: MR25H40 Rev. 2, 1/2011 Mode 3 7 Mode 0 High Z 0 ...
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... Everspin Technologies © 2011 Figure 2.2 WREN Instruction (06h High Impedance Figure 2.3 WRDI Instruction (04h High Impedance 6 Document Number: MR25H40 Rev. 2, 1/2011 MR25H40 Mode Mode Mode Mode ...
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... Address MSB High Impedance 7 MR25H40 Mode Mode 0 Status Register Data Out MSB Document Number: MR25H40 Rev. 2, 1/2011 Data Out ...
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... Data Byte High Impedance 8 MR25H40 MSB Data Byte MSB Document Number: MR25H40 Rev. 2, 1/2011 Mode 3 Mode ...
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... Active Current . The CS pin must remain high until the t RDP Figure 2.8 WAKE Instruction (ABh Sleep Mode Current 9 MR25H40 . If power is removed Standby Current Sleep Mode Current period is over. RDP t RDP Standby Current Document Number: MR25H40 Rev. 2, 1/2011 Mode 3 Mode 0 Mode 3 Mode 0 ...
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... IN I OUT BIAS T stg T Lead H max_write H max_read . The DC value of V must not exceed actual applied must not exceed applied MR25H40 1 Value -0.5 to 4.0 -0 0.5 DD ±20 0.600 - -55 to 150 260 12,000 12,000 DD by more than 2V for 10ns with I Document Number: MR25H40 Rev. 2, 1/2011 Unit °C °C °C A/m A/m by more limited IN ...
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... Table 3.3 DC Characteristics Symbol Min 2 0.2 DD Table 3.4 Power Supply Characteristics Symbol I DDR I DDR I DDW I DDW I SB1 I SB2 I ZZ Document Number: MR25H40 Rev. 2, 1/2011 11 MR25H40 Typical Max Unit 3 0 0.8 V ° Typical Max Unit - ±1 μA - ±1 μ Typical ...
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... Figure 4.1 Output Load for Impedance Parameter Measurements Output Figure 4.2 Output Load for all Other Parameter Measurements Everspin Technologies © 2011 Table 4.1 Capacitance Symbol I/O Table 4.2 AC Measurement Conditions 3.3 V Output 435 Document Number: MR25H40 Rev. 2, 1/2011 12 MR25H40 1 Typical Max - Value Unit 1 See Figure 4.1 See Figure 4 ...
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... DD V (min) DD Reset state of the device V WI Everspin Technologies © 2011 = 400 μs after power up. Users must wait this time PU so that the signal tracks the power supply during power-up DD Table 4.3 Power-Up Symbol Min V 2 400 PU Figure 4.3 Power-Up Timing Chip Selection not allowed t PU Time 13 MR25H40 Typical Max - TBD - - Normal Operation Document Number: MR25H40 Rev. 2, 1/2011 Unit V μs ...
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... SU t WPS t 5 WPH 400 RDP t 12 DIS =3 Document Number: MR25H40 Rev. 2, 1/2011 MR25H40 1 Typical Max Unit - 40 MHz - ...
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... V IH SCK High Impedance SCK HOLD SO Everspin Technologies © 2011 Figure 4.4 Synchronous Data Timing Figure 4.5 HOLD Timing Document Number: MR25H40 Rev. 2, 1/2011 MR25H40 CSH DIS ...
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... DCR 8 Pin DFN on Tape and Reel PU 8 Pin PDIP in Tube Temperature Range C Industrial (-40 to +85 °C ambient) Memory Density Interface 25H High Speed Serial SPI Family Product Type MR Magnetoresistive RAM Table 5.1 Available Parts Description 3 V 4Mb Serial MRAM 8-DFN 3 V 4Mb Serial MRAM 8-DFN Tape and Reel 3 V 4Mb Serial MRAM 8-DIP Tube 16 MR25H40 Temperature Industrial Industrial Commercial Document Number: MR25H40 Rev. 2, 1/2011 ...
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... Coplanarity applies to the exposed pad as well as the terminals. Coplanarity shall not exceed 0.08 mm. 3. Warpage shall not exceed 0.10 mm. 4. Refer to JEDEC MO-229 Everspin Technologies © 2011 Figure 6.1 DFN Package 1.27 0.45 0 0.35 0.70 BSC 0.35 0.05 Ref. 0.50 17 MR25H40 Exposed metal Pad. Do not connect anything except DAP Size 4 Detail 4.20 4.20 0.261 C0.35 R0.20 4.00 4.00 0.195 Document Number: MR25H40 Rev. 3, 3/2011 0.211 0.05 0.195 0 ...
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... PIN INDEX Unit Max 10.16 6.60 - Min 9.14 6.10 inch - Max 0.40 0.26 - Min 0.36 0.24 Reference JEDEC MO-001 Everspin Technologies © 2011 Figure 6.2 DIP Package 3.56 1.02 3.56 3.05 0.38 3.04 0.14 0.04 0.14 0.12 0.02 0.12 18 MR25H40 0.53 2.79 8.26 9.40 0.38 2.29 7.62 8.13 0.02 0.11 0.33 0.37 0.01 0.09 0.30 0.32 Document Number: MR25H40 Rev. 2, 1/2011 J 0.30 0.20 0.008 0.012 ...
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... Everspin Technologies was negligent regarding the design or manufacture of the part. Everspin™ and the Everspin logo are trademarks of Everspin Technologies, Inc. All other product or service names are the property of their respective owners. ©Everspin Technologies, Inc. 2011 19 MR25H40 Document Number: MR25H40 Rev. 2, 1/2011 ...