MRF275 MOTOROLA [Motorola, Inc], MRF275 Datasheet
MRF275
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MRF275 Summary of contents
Page 1
... 500 MHz (FLANGE) G CASE 375–04, STYLE 2 D Symbol V DSS V DGR stg T J Symbol R JC Order this document by MRF275G/D N–CHANNEL MOS BROADBAND 100 – 500 MHz RF POWER FET Value Unit 65 Vdc 65 Vdc 40 Adc 26 Adc 400 Watts 2. – ...
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... out = 150 500 MHz 100 mA) Electrical Ruggedness ( out = 150 500 MHz 100 mA, VSWR 30:1 at all Phase Angles) (1.) Each side of device measured separately. (2.) Measured in push–pull configuration. MRF275G 2 Symbol Min Typ Max V (BR)DSS 65 — ...
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... C19 C10 Z7 C11 C12 Z8 C13 Ferroxcube VK200 20/4B 4 Turns #16, 0.340 I.D., Enameled Wire 1.0 k ,1/4 W Resistor 20 x 200 x 250 mils, Wear Pads, Beryllium–Copper, (See Component Location Diagram) 1.10 x 0.245 , Microstrip Line 0.300 x 0.245 , Microstrip Line 1.00 x 0.245 , Microstrip Line 0.060 Teflon–fiberglass, MRF275G 3 ...
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... 160 140 120 100 SUPPLY VOLTAGE (V) Figure 6. Output Power versus Supply Voltage MRF275G 4 TYPICAL CHARACTERISTICS 160 140 120 400 MHz 500 MHz 100 –10 –8 Figure 3. Output Power versus Gate Voltage ...
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... C oss 100 C iss C rss DRAIN–SOURCE VOLTAGE (V) Figure 8. Capacitance versus Drain–Source Voltage* *Data shown applies only to one half of device, MRF275G 100 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 1 1.2 1 1.0 MHz 0 –25 ...
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... MHz f = 500 MHz 400 400 Z in 225 Figure 11. Series Equivalent Input/Output Impedance MRF275G 100 mA, P out = 150 W f (MHz) Ohms 225 1.6 – j2.30 400 1.9 + j0.48 500 1.9 + j2. Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency ...
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... C15 28 V C18 0.180 0.200 #18 Wire, Hairpin Inductor 12 Turns #18, 0.340 I.D., Enameled Wire Ferroxcube VK200 20/4B 3 Turns #16, 0.340 I.D., Enameled Wire 1.0 k 1/4 W Resistor 10 k 1/4 W Resistor 0.400 x 0.250 , Microstrip Line 0.870 x 0.250 , Microstrip Line 0.500 x 0.250 , Microstrip Line 0.060 Teflon–fiberglass, MRF275G 7 ...
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... Turns AWG #16, 1/4 I.D., Enamel Wire, Close Wound L2 Ferrite Beads of Suitable Material for 1.5 – 2.0 H Total Inductance Board material 062 fiberglass (G10 Two sided, 1 oz. Copper. r Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent. MRF275G D.U. NOTE: For stability, the input transformer T1 should be loaded ...
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... B1 R1 C15 C14 Figure 14. MRF275G Component Location (500 MHz) Figure 15. MRF275G Circuit Board Photo Master (500 MHz) Scale 1:1 (Reduced 25% in printed data book, DL110/D) MOTOROLA RF DEVICE DATA C16 BEADS 1– C20 BEADS 4–6 MRF275G (Not to Scale) ...
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... It should be noted that C iss , C oss , C rss are measured at zero drain current and are MRF275G 10 Figure 16. MRF275G Test Fixture provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such. ...
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... Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. ...
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... C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96 E 0.050 0.070 1.27 1.77 G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84 J 0.004 0.006 0.11 0.15 K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23 Q 0.060 0.070 1.52 1.78 R 0.390 0.410 9.91 10.41 U 1.100 BSC 27.94 BSC STYLE 2: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE Mfax is a trademark of Motorola, Inc. MOTOROLA RF DEVICE DATA MRF275G/D ...