MRFG35010A Freescale Semiconductor, Inc, MRFG35010A Datasheet

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MRFG35010A

Manufacturer Part Number
MRFG35010A
Description
MRFG35010AMRFG35010AR1 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: V
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
140 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Select Documentation/Application Notes - AN1955.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
out
= 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
(1)
Test Methodology
Characteristic
Rating
Class AB
Class A
DD
= 12 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
T
DSS
θJC
GS
stg
ch
in
Document Number: MRFG35010A
MRFG35010AR1
CASE 360D - 02, STYLE 1
3.5 GHz, 10 W, 12 V
1C (Minimum)
III (Minimum)
A (Minimum)
- 65 to +150
Value
GaAs PHEMT
POWER FET
Value
Class
175
4.0
4.1
NI - 360HF
15
33
- 5
(1, 2)
Rev. 2, 12/2008
MRFG35010AR1
°C/W
Unit
dBm
Unit
Vdc
Vdc
°C
°C
1

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MRFG35010A Summary of contents

Page 1

... For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35010A = 12 Volts Symbol ...

Page 2

... Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V Output Power Compression Point Measurements made with device in test fixture. MRFG35010AR1 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Microstrip 0.080″ x 0.240″ Microstrip 0.044″ x 0.143″ Microstrip Rogers 4350, 0.020″, ε = 3.5 r Part Number Manufacturer 100A6R81BW150XT ATC 100A100JW150XT ATC 100A101JW150XT ATC 100B101JW500XT ATC 100B102JW500XT ATC 200B104KW50XT ATC 200B393KW50XT ATC GRM55DR61H106KA88B Murata P51ETR - ND Newark MRFG35010AR1 RF 3 ...

Page 4

... Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010AR1 4 C13 C12 C11 C10 C14 C15 C16 C17 MRFG35010, Rev Device Data Freescale Semiconductor ...

Page 5

... ACPR OUTPUT POWER (dBm) out Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power and Γ are the impedances presented to the DUT −5 −10 −15 −20 − MRFG35010AR1 5 ...

Page 6

... V Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB −30 @ 0.01% Probability (CCDF) −40 −50 −60 20 NOTE: Data is generated from the test circuit shown. MRFG35010AR1 6 TYPICAL CHARACTERISTICS Vdc 140 mA 3550 MHz, Single−Carrier DS DQ W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF η ...

Page 7

... W Avg out source load MHz W W 3550 4.6 - j18.7 4 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load = 25 Ω Output Matching Network MRFG35010AR1 7 ...

Page 8

... MRFG35010AR1 Vdc 1000 mA ∠ φ 9.867 89.9 0.0083 8.220 87.6 0.0086 7.055 85.6 0.0083 6.192 83.8 0.0088 5 ...

Page 9

... MRFG35010AR1 9 ...

Page 10

... MRFG35010AR1 Vdc 1000 mA ∠ φ 1.683 - 59.6 0.1025 1.706 - 62.7 0.1061 1.729 - 66.0 0.1097 1.752 - 69.4 0.1136 1.775 - 72 ...

Page 11

... MRFG35010AR1 11 ...

Page 12

... MRFG35010AR1 Vdc 140 mA ∠ φ 8.882 91.6 0.0167 7.414 89.0 0.0166 6.373 86.6 0.0168 5.598 84.7 0.0170 4 ...

Page 13

... MRFG35010AR1 13 ...

Page 14

... MRFG35010AR1 Vdc 140 mA ∠ φ 1.459 - 59.3 0.0880 1.482 - 62.4 0.0913 1.505 - 65.6 0.0945 1.530 - 68.8 0.0977 1.554 - 72 ...

Page 15

... MRFG35010AR1 15 ...

Page 16

... (FLANGE bbb (LID) ccc SEATING PLANE A A MRFG35010AR1 16 PACKAGE DIMENSIONS S (INSULATOR) bbb bbb (LID) ccc ...

Page 17

... Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range • Added Table 3, ESD Protection Characteristics renumbered subsequent tables RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35010AR1 17 ...

Page 18

... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFG35010AR1 Document Number: MRFG35010A Rev. 2, 12/2008 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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