MT16VDDF12864H Micron, MT16VDDF12864H Datasheet

MT16VDDF12864H

Manufacturer Part Number

MT16VDDF12864H

Description

SMALL-OUTLINE DDR SDRAM DIMM

Manufacturer

Micron

Datasheet

1.MT16VDDF12864H.pdf (31 pages)

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SMALL-OUTLINE

DDR SDRAM DIMM

Features

• 200-pin, small-outline, dual in-line memory

• Fast data transfer rates: PC1600, PC2100, and PC2700

• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR

• 512MB (64 Meg x 64), 1GB (128 Meg x 64)

• V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• Internal, pipelined double data rate (DDR)

• Bidirectional data strobe (DQS) transmitted/

• Differential clock inputs CK and CK#

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Auto Refresh and Self Refresh Modes

• 7.8125µs maximum average periodic refresh interval

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Gold edge contacts

Table 1:

09005aef80a646bc

DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN

Refresh Count

Device Row Addressing

Device Bank Addressing

Device Configuration

Device Column Addressing

Module Rank Addressing

module (SODIMM)

SDRAM components

aligned with data for WRITEs

architecture; two data accesses per clock cycle

received with data—i.e., source-synchronous data

capture

DDSPD

= V

= +2.3V to +3.6V

Q = +2.5V

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

Address Table

NOTE:

MT16VDDF6464H – 512MB

MT16VDDF12864H – 1GB

For the latest data sheet, please refer to the Micron

site:

OPTIONS

• Package

• Frequency/CAS Latency

Figure 1: 200-Pin SODIMM (MO-224)

200-pin SODIMM (standard)

200-pin SODIMM (lead-free)

167 MHz (333 MT/s) CL = 2.5

133 MHz (266 MT/s) CL = 2

133 MHz (266 MT/s) CL = 2.5

100 MHz (200 MT/s) CL = 2

512MB Module

1GB Module

www.micron.com/moduleds

4 (BA0, BA1)

8K (A0–A12)

2 (S0#, S1#)

1K (A0–A9)

32 Meg x 8

1. Contact factory for availability of lead-free prod-

2. CL = CAS (READ) latency.

512MB

ucts.

200-PIN DDR SODIMM

512MB, 1GB (x64)

2K (A0–A9, A11)

8K (A0–A12)

4 (BA0, BA1)

2 (S0#, S1#)

64 Meg x 8

1GB

MARKING

-335

-262

-26A

-265

-202

Web

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