MTP3055 MOTOROLA [Motorola, Inc], MTP3055 Datasheet
MTP3055
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MTP3055 Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 ms) Order this document by MTP3055V/D MTP3055V Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS R DS(on) = 0.15 OHM TM CASE 221A–06, Style 5 TO– ...
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... MTP3055V ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 150 C) Gate–Body Leakage Current ( ...
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... Figure 4. On–Resistance versus Drain Current 100 125 150 175 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage MTP3055V – 100 ...
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... MTP3055V Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTP3055V d(off d(on) 10 ...
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... MTP3055V 100 SINGLE PULSE 100 1 DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 Figure 15. Diode Reverse Recovery Waveform 6 SAFE OPERATING AREA ...
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... T S STYLE 5: U PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R J CASE 221A–06 ISSUE Y MTP3055V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MTP3055V/D* Motorola TMOS Power MOSFET Transistor Device Data MTP3055V/D ...