MUR1100E EIC Semiconductor Incorporated, MUR1100E Datasheet
MUR1100E
Manufacturer Part Number
MUR1100E
Description
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.MUR1100E.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUR1100EG
Manufacturer:
ON
Quantity:
50 000
Part Number:
MUR1100EG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MUR1100ERLG
Manufacturer:
ON/安森美
Quantity:
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Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FEATURES :
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Notes :
Page 1 of 2
MUR1100E
PRV : 1000 Volts
Io : 1.0 Amperes
* Ultrafast 75 Nanoescond Recovery Time
* High Temperature
* Low Forward Voltage
* Low Leakage Current
* Pb / RoHS Free
Maximum Repetitive Peak Reverse Voltage
Maximum Working Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Maximum Non-repetitive Peak Forward Surge Current
Maximum Instantaneous Forward Voltage at I
Maximum Instantaneous Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 2 )
Junction Temperature Range
Storage Temperature Range
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
(1) Pulse Test : Pulse Width = 300 s, Duty Cycle
(2) Reverse Recovery Test Conditions : I
method 208 guaranteed
RATING
F
= 0.5A, I
F
= 1 Amp. (Note 1)
R
2.0%
= 1A ; Irr = 0.25 A
SYMBOL
V
V
I
T
I
I
V
F(AV)
RWM
FSM
R(H)
Trr
RRM
V
T
STG
I
DC
R
F
J
ULTRAFAST RECTIFIERS
Dimensions in inches and ( millimeters )
600 ( T
0.034 (0.86)
0.028 (0.71)
10 ( T
1.0 @ T
0.107 (2.7)
0.080 (2.0)
- 65 to + 175
- 65 to + 175
VALUE
1000
1000
1000
1.75
J
J
35
75
A
= 100 C )
= 25 C )
= 95 ºC
DO - 41
Rev. 01 : September 1, 2005
1.00 (25.4)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
MIN.
UNIT
ns
V
V
V
A
A
V
C
C
A
A
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MUR1100E Summary of contents
Page 1
... MUR1100E PRV : 1000 Volts Io : 1.0 Amperes FEATURES : * Ultrafast 75 Nanoescond Recovery Time * High Temperature * Low Forward Voltage * Low Leakage Current * Pb / RoHS Free MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0 ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( MUR1100E ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Vdc (approx) NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1 ...