MUR4100E ON Semiconductor, MUR4100E Datasheet

DIODE ULTRA FAST 4A 1KV DO-201AD

MUR4100E

Manufacturer Part Number
MUR4100E
Description
DIODE ULTRA FAST 4A 1KV DO-201AD
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MUR4100E

Voltage - Forward (vf) (max) @ If
1.85V @ 4A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
25µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
100ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

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Manufacturer
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Price
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MUR480EG, MUR4100EG
SWITCHMODEt
Power Rectifiers
Ultrafast “E'' Series with High Reverse
Energy Capability
power supplies, inverters and as free wheeling diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 8
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Square Wave; Mounting Method #3 Per Note 2)
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction and Storage Temperature
Range
These state-of-the-art devices are designed for use in switching
Inductive Load Circuits
Leads are Readily Solderable
260°C Max. for 10 Seconds
the Part Number
20 mJ Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
These are Pb-Free Devices*
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Shipped in Plastic Bags, 5,000 per Bag
Available Tape and Reel, 1,500 per Reel, by Adding a “RL'' Suffix to
Polarity: Cathode indicated by Polarity Band
Rating
MUR4100E
MUR480E
Symbol
T
V
V
I
I
J
F(AV)
FSM
RWM
V
RRM
, T
R
stg
T
A
-65 to
Value
4.0 @
1000
+175
800
= 35°C
70
1
Unit
°C
V
A
A
See detailed ordering and shipping information on page 2 of
this data sheet.
4.0 AMPERES, 800-1000 VOLTS
A
MUR4xxx = Device Number (see page 2)
YY
WW
G
(Note: Microdot may be in either location)
ULTRAFAST RECTIFIER
ORDERING INFORMATION
MARKING DIAGRAM
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
AXIAL LEAD
CASE 267
STYLE 1
Publication Order Number:
YYWW G
MUR
4xxx
A
G
MUR480E/D

Related parts for MUR4100E

MUR4100E Summary of contents

Page 1

... MUR480EG, MUR4100EG SWITCHMODEt Power Rectifiers Ultrafast “E'' Series with High Reverse Energy Capability These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits • ...

Page 2

... MUR4100E MUR4100EG MUR4100ERL MUR4100ERLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free. MUR480EG, MUR4100EG Marking Package Axial Lead* Axial Lead* MUR480E Axial Lead* ...

Page 3

... I (Capacitive PK =20 Load) I 4.0 AV 3.0 2.0 1 1.0 2.0 3 AVERAGE FORWARD CURRENT (AMPS) F(AV) Figure 4. Power Dissipation MUR480EG, MUR4100EG MUR480EG, MUR4100EG 1000 400 200 100 25° 100°C 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001 0 100 200 Figure 2 ...

Page 4

... S 1 Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. 1 Although it is not recommended to design for this condition, the new “ ...

Page 5

... MUR480EG, MUR4100EG NOTE 2 - AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-ambient (R ) for the mountings shown used as typical qJA guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR R IN STILL AIR qJA Lead Length, L (IN) ...

Page 6

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com MUR480EG, MUR4100EG PACKAGE DIMENSIONS AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G NOTES ...

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