NID9N05 ON Semiconductor, NID9N05 Datasheet

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NID9N05

Manufacturer Part Number
NID9N05
Description
Power Mosfet 9 Amps, 52 Volts
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NID9N05ACLT4G
0
Part Number:
NID9N05CL
Manufacturer:
ON
Quantity:
12 500
Part Number:
NID9N05CLT4
Manufacturer:
ON
Quantity:
12 500
Part Number:
NID9N05CLT4G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NID9N05CLT4G
Manufacturer:
ON
Quantity:
12 500
NID9N05CL
Power MOSFET
9 Amps, 52 Volts
N-Channel, Logic Level, Clamped
MOSFET w/ ESD Protection in a
DPAK Package
Benefits
Features
Applications
1. When surface mounted to an FR4 board using 1 pad size, (Cu area 1.127 in
2. When surface mounted to an FR4 board using minimum recommended pad
March, 2003 - Rev. 3
MAXIMUM RATINGS
Drain-to-Source Voltage Internally Clamped
Gate-to-Source Voltage - Continuous
Drain Current - Continuous @ T
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche En-
ergy - Starting T
(V
25 W)
Thermal Resistance - Junction-to-Case
Maximum Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Sec.
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Diode Clamp Between Gate and Source
ESD Protection - HBM 5000 V
Active Over-Voltage Gate to Drain Clamp
Scalable to Lower or Higher R
Internal Series Gate Resistance
Automotive and Industrial Markets:
Semiconductor Components Industries, LLC, 2003
size, (Cu area 0.412 in
DD
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
= 50 V, I
D(pk)
- Single Pulse (tp = 10 ms)
J
= 125 C
= 1.5 A, V
Rating
2
(T
)
J
A
= 25 C unless otherwise noted)
GS
= 25 C
A
= 10 V, R
= 25 C
DS(on)
G
=
Symbol
T
V
R
R
R
J
V
E
I
P
, T
T
DSS
DM
I
qJC
qJA
qJA
GS
D
AS
D
L
stg
52-59
-55 to
Value
28.8
175
160
100
260
9.0
5.2
35
72
12
1
Unit
Vdc
Vdc
C/W
mJ
W
A
C
C
2
)
(Pin 1)
D9N05CL
Y
WW
ORDERING INFORMATION
NID9N05CLT4
NID9N05CL
Gate
CASE 369A
Device
STYLE 2
ESD Protection
DPAK
R
DS(on)
R
= Device Code
= Year
= Work Week
52 V CLAMPED
G
http://onsemi.com
9 AMPERES
Overvoltage
Package
Protection
= 90 mW (Typ.)
DPAK
DPAK
Publication Order Number:
1
3
2
2500/Tape & Reel
MARKING
DIAGRAM
1 = Gate
2 = Drain
3 = Source
4 = Drain
D9N05CL
75 Units/Rail
Shipping
NID9N05CL/D
YWW
X
(Pins 2, 4)
Source
(Pin 3)
Drain
M
PWR
4

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NID9N05 Summary of contents

Page 1

... MARKING DIAGRAM YWW DPAK CASE 369A 3 D9N05CL STYLE Gate D9N05CL = Device Code 2 = Drain Y = Year 3 = Source WW = Work Week 4 = Drain ORDERING INFORMATION Device Package Shipping NID9N05CLT4 DPAK 2500/Tape & Reel NID9N05CL DPAK 75 Units/Rail Publication Order Number: NID9N05CL/D Drain M PWR Source (Pin 3) 4 ...

Page 2

... Forward Transconductance (Note DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance 300 ms, Duty Cycle 3. Pulse Test: Pulse Width 4. Switching characteristics are independent of operating junction temperatures. NID9N05CL ( unless otherwise noted Vdc 9.0 Adc Vdc ...

Page 3

... SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time Reverse Recovery Stored Charge ESD CHARACTERISTICS Electro-Static Discharge Capability 300 ms, Duty Cycle 3. Pulse Test: Pulse Width 4. Switching characteristics are independent of operating junction temperatures. NID9N05CL ( unless otherwise noted Vdc Vdc Vdc, ...

Page 4

... GATE-T O-SOURCE VOLTAGE (VOLTS) GS Figure 3. On-Resistance versus Gate-to-Source Voltage 2 1.5 1 0.5 -50 - JUNCTION TEMPERATURE ( C) J Figure 5. On-Resistance Variation with Temperature NID9N05CL ...

Page 5

... TOTAL GATE CHARGE (nC) g Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge DRAIN-T O-SOURCE DIODE CHARACTERISTICS 0.4 Figure 10. Diode Forward Voltage versus Current NID9N05CL Frequency = 10 kHz iss C oss DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 7 ...

Page 6

... Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For NID9N05CL SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified ...

Page 7

... 0.1 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased 0.5 0.2 0.1 1 0.05 0.01 SINGLE PULSE 001 0.00001 0.0001 NID9N05CL SAFE OPERATING AREA 10 s 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 10 Safe Operating Area P (pk DUTY CYCLE ...

Page 8

... G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 −−− 0.51 −−− V 0.030 0.050 0.77 1.27 Z 0.138 −−− 3.51 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NID9N05CL/D ...

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