NIF62514 ON Semiconductor, NIF62514 Datasheet

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NIF62514

Manufacturer Part Number
NIF62514
Description
Selfprotected Fet With Temperature And Current Limit
Manufacturer
ON Semiconductor
Datasheet

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NIF62514
Self-Protected FET
with Temperature and
Current Limit
utilize ON Semiconductor's latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
MOSFET MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 6
Drain-to-Source Voltage Internally Clamped
Drain-to-Gate Voltage Internally Clamped
(R
Gate-to-Source Voltage
Drain Current
Total Power Dissipation @ T
Thermal Resistance, Junction-to-Tab
Single Pulse Drain-to-Source Avalanche Energy
Operating and Storage Temperature Range
HDPlus devices are an advanced series of power MOSFETs which
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low R
I
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb-Free Packages are Available
GS
DSS
- Continuous @ T
- Continuous @ T
- Pulsed (t
@ T
@ T
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
(V
V
R
DS
G
= 1.0 MW)
DD
= 25 W)
Specified at Elevated Temperature
A
A
= 40 Vdc, I
= 25 Vdc, V
DS(on)
= 25°C (Note 2)
= 25°C (Note 3)
p
≤ 10 ms)
L
Rating
GS
= 2.8 Apk, L = 80 mH,
A
A
= 25°C
= 100°C
= 5.0 Vdc,
A
= 25°C (Note 1)
Preferred Device
(T
J
= 25°C unless otherwise noted)
Symbol
T
V
V
R
R
R
J
V
E
I
P
DGR
, T
DSS
DM
I
I
qJT
qJA
qJA
GS
D
D
AS
D
stg
-55 to
Value
"16
1.73
8.93
72.3
114
300
150
1.1
40
40
14
Internally
Limited
1
°C/W
Unit
Vdc
Vdc
Vdc
mJ
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Limited by the current limit circuit.
Gate
Input
(Note: Microdot may be in either location)
ESD Protection
SOURCE
40 VOLTS CLAMPED
A
Y
W
62514
G
1
ORDERING INFORMATION
DRAIN
Temperature
2
GATE
R
R
MARKING DIAGRAM
G
6.0 AMPERES*
3
http://onsemi.com
Limit
DS(on)
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
4
Overvoltage
1
2
3
Protection
= 90 mW
Publication Order Number:
CASE 318E
Current
SOT-223
STYLE 3
Limit
4
DRAIN
Drain
Current
NIF62514/D
Sense
Source
M
PWR

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NIF62514 Summary of contents

Page 1

... Protection R G ESD Protection Temperature Current Current Limit Limit Sense Source 4 SOT-223 CASE 318E 1 2 STYLE 3 3 MARKING DIAGRAM 1 GATE 4 2 DRAIN DRAIN 3 SOURCE A = Assembly Location Y = Year W = Work Week 62514 = Specific Device Code G = Pb-Free Package ORDERING INFORMATION Publication Order Number: NIF62514/D ...

Page 2

... Current Limit Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) ESD ELECTRICAL CHARACTERISTICS (T Electro-Static Discharge Capability Electro-Static Discharge Capability 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. NIF62514 (T = 25°C unless otherwise noted ...

Page 3

... I = 1.4 A 200 D 175 150 Maximum 125 100 75 Typical -50 - JUNCTION TEMPERATURE (°C) J Figure 5. Drain-to-Source Resistance versus Junction Temperature NIF62514 150° 25° ...

Page 4

... Figure 7. Drain-to-Source Resistance versus Junction Temperature 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 Single Pulse 0.1 0.00001 0.0001 (Non-normalized Junction-to-Ambient mounted on minimum pad area) NIF62514 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -50 -30 75 100 125 150 Figure 8. Gate Threshold Voltage versus Current Limit Temperature Limit ...

Page 5

... ORDERING INFORMATION Device NIF62514T1 NIF62514T1G NIF62514T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NIF62514 Package SOT-223 SOT-223 (Pb-Free) SOT-223 (Pb-Free) http://onsemi.com 5 † Shipping 1000 / Tape & Reel ...

Page 6

... DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NIF62514/D ...

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