NTB125N02R ON Semiconductor, NTB125N02R Datasheet

no-image

NTB125N02R

Manufacturer Part Number
NTB125N02R
Description
MOSFET N-CH 24V 15.9A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB125N02R

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
15.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
3440pF @ 20V
Power - Max
1.98W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB125N02RG
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTB125N02RT4G
Manufacturer:
ON/安森美
Quantity:
20 000
NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
2. When surface mounted to an FR4 board using minimum recommended pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
MAXIMUM RATINGS
PIN ASSIGNMENT
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
Drain Current −
Thermal Resistance −
Total Power Dissipation @ T
Drain Current − Continuous @ T
Thermal Resistance −
Total Power Dissipation @ T
Drain Current − Continuous @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
L = 1 mH, R
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
PIN
1
2
3
4
Operation
Planar HD3e Process for Fast Switching Performance
Body Diode for Low t
Low C
Optimized Q
Low Gate Charge
Pb−Free Packages are Available
(Cu Area 1.127 in
size, (Cu Area 0.412 in
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
DD
Continuous @ T
Continuous @ T
Continuous @ T
Single Pulse (t
= 50 V
iss
dc
G
to Minimize Driver Loss
, V
= 25 W)
gd
GS
p
Parameter
C
A
and R
J
= 10 ms)
2
C
= 10 V
).
= 25°C, Limited by Package
= 25°C, Limited by Wires
= 25°C
= 25°C, Chip
FUNCTION
Gate
Drain
Source
Drain
(T
2
DS(on)
).
dc
2
rr
J
A
A
= 25°C Unless otherwise specified)
C
, I
and Q
PAK
= 25°C
= 25°C
= 25°C
L
= 15.5 A
A
A
for Shoot−through Protection
= 25°C
= 25°C
rr
and Optimized for Synchronous
pk
,
Symbol
T
V
R
R
R
J
V
E
P
P
P
DSS
, T
T
I
I
I
I
I
I
qJC
qJA
qJA
GS
AS
D
D
D
D
D
D
D
D
D
L
stg
−55 to
Value
113.6
120.5
2.72
18.6
1.98
15.9
±20
125
250
150
120
260
1.1
24
95
46
63
1
°C/W
°C/W
°C/W
Unit
V
V
mJ
°C
°C
W
W
W
A
A
A
A
A
A
dc
dc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
2
2
125 AMPERES, 24 VOLTS
3
3
R
ORDERING INFORMATION
DS(on)
125N2x = Device Code
x
A
Y
WW
G
4
G
http://onsemi.com
4
CASE 418AA
= 3.7 mW (Typ)
CASE 221A
= R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
TO−220AB
STYLE 5
STYLE 2
D
D
2
Publication Order Number:
PAK
S
NTB125N02R/D
DIAGRAMS
MARKING
125N2RG
125N2G
AYWW
AYWW

Related parts for NTB125N02R

NTB125N02R Summary of contents

Page 1

... NTB125N02R, NTP125N02R Power MOSFET 125 N−Channel 2 TO−220, D PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low t and Q and Optimized for Synchronous rr rr Operation • Low C to Minimize Driver Loss iss • Optimized Q and R for Shoot−through Protection ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTP125N02R NTP125N02RG NTB125N02R NTB125N02RG NTB125N02RT4 NTB125N02RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTB125N02R, NTP125N02R (T = 25°C Unless otherwise specified MHz ...

Page 3

... Figure 3. On−Resistance versus Drain Current and Temperature 1.4 1.2 1.0 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTB125N02R, NTP125N02R 200 ≥ 3 160 3.0 V 120 2 0 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0. 4 ...

Page 4

... Figure 7. Capacitance Variation 1000 100 d(off d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance 1000 V SINGLE PULSE T 100 10 1.0 0.1 NTB125N02R, NTP125N02R 10 8.0 6.0 C iss 4 oss 2.0 C rss Drain−to−Source Voltage versus Total Charge 25° 100 SOURCE− ...

Page 5

... Normalized Steady State qJC 0.1 0.01 0.00001 0.0001 NTB125N02R, NTP125N02R 0.001 0.01 t, TIME (s) Figure 12. Thermal Response http://onsemi.com 5 0 ...

Page 6

... NTB125N02R, NTP125N02R −B− −T− SEATING PLANE 0.13 (0.005) VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS ...

Page 7

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB125N02R, NTP125N02R PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA SEATING − ...

Related keywords