NTR2101P ON Semiconductor, NTR2101P Datasheet

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NTR2101P

Manufacturer Part Number
NTR2101P
Description
Small Signal Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NTR2101P
Small Signal MOSFET
−8.0 V, −3.7 A, Single P−Channel, SOT−23
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State
Junction−to−Ambient − t ≤ 10 s
Leading Trench Technology for Low R
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
Pb−Free Package is Available
High Side Load Switch
DC−DC Conversion
Cell Phone, Notebook, PDAs, etc.
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8″ from case for 10 s)
Parameter
Parameter
(T
t ≤ 10 s
J
= 25°C unless otherwise stated)
tp = 10 ms
t ≤ 10 s
T
T
A
A
= 25°C
= 70°C
DS(on)
Symbol
Symbol
V
T
R
R
V
I
P
T
DSS
DM
STG
T
I
I
qJA
qJA
GS
D
S
J
D
L
,
−55 to
Value
−8.0
±8.0
−3.7
−3.0
0.96
−1.2
Max
−11
150
260
160
130
1
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
†For information on tape and reel specifications,
NTR2101PT1
NTR2101PT1G
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−8.0 V
(BR)DSS
1
CASE 318
STYLE 21
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
SOT−23
Device
upon manufacturing location.
2
TR7
M
G
ORDERING INFORMATION
G
3
39 mW @ −4.5 V
52 mW @ −2.5 V
79 mW @ −1.8 V
http://onsemi.com
R
= Specific Device Code
= Date Code*
= Pb−Free Package
DS(on)
(Pb−Free)
Package
SOT−23
SOT−23
MARKING DIAGRAM &
P−Channel
PIN ASSIGNMENT
Typ
Publication Order Number:
Gate
D
S
1
TR7 M G
Drain
3000/Tape & Reel
3000/Tape & Reel
3
G
Source
Shipping
NTR2101P/D
2
I
−3.7 A
D
Max

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NTR2101P Summary of contents

Page 1

... Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION † Device Package Shipping SOT−23 3000/Tape & Reel SOT−23 3000/Tape & Reel (Pb−Free) Publication Order Number: NTR2101P/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

V = −2 −6 −2 −2 −V , DRAIN−TO−SOURCE VOLTAGE ...

Page 4

2000 1500 C ISS C 1000 RSS 500 C OSS 0 −4 − −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 V = ...

Page 5

... L1 0.35 0.54 0.69 0.014 0.021 H 2.10 2.40 2.64 0.083 0.094 E STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTR2101P/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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