NTZD3154N ON Semiconductor, NTZD3154N Datasheet

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NTZD3154N

Manufacturer Part Number
NTZD3154N
Description
Small Signal Mosfet 20 V, 540 Ma, Dual Nchannel
Manufacturer
ON Semiconductor
Datasheet

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NTZD3154N
Small Signal MOSFET
20 V, 540 mA, Dual N−Channel
Features
Applications
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
Continuous Drain Current
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State
Junction−to−Ambient – t v 5 s (Note 1)
Low R
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These are Pb−Free Devices
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
(Cu. area = 1.127 in sq [1 oz] including traces).
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(1/8″ from case for 10 s)
(Note 1)
DS(on)
Improving System Efficiency
Parameter
Parameter
(T
J
= 25°C unless otherwise noted.)
Steady
t v 5 s
State
Steady State
t
p
t v 5 s
= 10 ms
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
Symbol
Symbol
R
V
T
V
I
T
P
P
qJA
DSS
DM
STG
T
I
I
I
GS
D
D
S
J
D
D
L
,
−55 to
Value
Max
500
447
±6.0
540
390
250
570
410
280
150
350
260
1.5
20
1
°C/W
Unit
Unit
mW
mW
mA
mA
mA
°C
°C
V
V
A
G1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
V
(BR)DSS
(Note: Microdot may be in either location)
20
G
D
S
6
2
CASE 463A
1
1
SOT−563−6
TV
M
G
ORDERING INFORMATION
2
3
1
D1
S1
1
400 mW @ 4.5 V
500 mW @ 2.5 V
700 mW @ 1.8 V
http://onsemi.com
PINOUT: SOT−563
R
= Specific Device Code
= Date Code
= Pb−Free Package
DS(on)
Top View
N−Channel
MOSFET
Typ
Publication Order Number:
G2
MARKING
DIAGRAM
I
D
TV M G
NTZD3154N/D
6
5
4
Max (Note 1)
G
540 mA
D2
S2
S
D
G
2
1
2

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NTZD3154N Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) PINOUT: SOT−563 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTZD3154N ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 1.2 5.5 V 1 0 1.0 V ...

Page 4

... GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance ORDERING INFORMATION Device NTZD3154NT1G NTZD3154NT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted 25° ...

Page 5

... C 0.08 0.12 0.18 0.003 0.005 0.007 D 1.50 1.60 1.70 0.059 0.062 0.066 E 1.10 1.20 1.30 0.043 0.047 0.051 e 0.5 BSC 0.02 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 H 1.50 1.60 1.70 0.059 0.062 0.066 E mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTZD3154N/D ...

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