Search results for "p-channel mode field effect transistor"
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Part Number:
PHC21025
Description:
Intermediate level n-channel and p-channel complementary pair enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSP250
Description:
Intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PHP225
Description:
Dual intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PHC2300
Description:
One n-channel and one p-channel enhancement mode field-effect transistor (fet) in a plastic package
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
CEM4600
Description:
Dual enhancement mode field effect transistor (n and p channel)
Manufacturer:
Chino-Excel Technology Corp.
Part Number:
NX2301P
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSH201
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSH202
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSH203
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSH205
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSH207
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSP220
Description:
Intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSP225
Description:
Intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSP230
Description:
Intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS192
Description:
Intermediate level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AK
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AKM
Description:
P-channel enhancement mode field-effect transistor (fet) in a leadless ultra small sot883 (sc-101) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AKS
Description:
Dual p-channel enhancement mode field-effect transistor (fet) in a very small sot363 (sc-88) package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AKT
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot416 (sc-75) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AKV
Description:
Dual p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BSS84AKW
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot323 (sc-70) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX1029X
Description:
Complementary n/p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008CBKS
Description:
Complementary n/p-channel enhancement mode field-effect transistor (fet) in very small sot363 (sc-88) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008CBKV
Description:
Complementary n/p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008PBK
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008PBKS
Description:
Dual p-channel enhancement mode field-effect transistor (fet) in a very small sot363 (sc-88) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008PBKT
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot416 (sc-75) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008PBKV
Description:
Dual p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
NX3008PBKW
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot323 (sc-70) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PHK04P02T
Description:
Logic level p-channel enhancement mode field-effect transistor (fet) in a plastic package using vertical d-mos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMDPB65UP
Description:
Dual small-signal p-channel enhancement mode field-effect transistor (fet) in a small and leadless ultra thin sot1118 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMDT290UCE
Description:
Complementary n/p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMDT670UPE
Description:
Dual p-channel enhancement mode field-effect transistor (fet) in an ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMF170XP
Description:
P-channel enhancement mode field-effect transistor (fet) in a sot323 (sc-70) small surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMFPB6532UP
Description:
Small-signal p-channel enhancement mode field-effect transistor (fet) using trench mosfet technology and ultra low vf maximum efficiency general application (mega) schottky diode combined in a small and leadless ultra thin sot1118 surface-mounted dev
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMFPB6545UP
Description:
Small-signal p-channel enhancement mode field-effect transistor (fet) using trench mosfet technology and ultra low vf maximum efficiency general application (mega) schottky diode combined in a small and leadless ultra thin sot1118 surface-mounted dev
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMG85XP
Description:
P-channel enhancement mode field-effect transistor (fet) in a very small sot363 (sc-88) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMK30EP
Description:
Extremely low level p-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMK35EP
Description:
Extremely low level p-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMK50XP
Description:
Extremely low level p-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMN27UP
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot457 (sc-74) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMN34UP
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot457 (sc-74) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMR670UPE
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot416 (sc-75) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMV160UP
Description:
P-channel enhancement mode field-effect transistor (fet) in a sot23 (to-236ab) small surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMV48XP
Description:
P-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMV65XP
Description:
Extremely low level p-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
PMZB670UPE
Description:
P-channel enhancement mode field-effect transistor (fet) in a leadless ultra small sot883b surface-mounted device (smd) plastic package using trench mosfet technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
AO6401
Description:
P-channel enhancement mode field effect transistor
Manufacturer:
Alpha & Omega Semiconductor
Datasheet:
Part Number:
AO4801A
Description:
Dual p-channel enhancement mode field effect transistor
Manufacturer:
Alpha & Omega Semiconductor
Datasheet: