PVD1352 International Rectifier, PVD1352 Datasheet

PVD1352

Manufacturer Part Number

PVD1352

Description

IC RELAY 100V 500MA 8-DIP

Manufacturer

International Rectifier

Series

PVD, BOSFET®r

Datasheet

1.PVD3354.pdf (6 pages)

Specifications of PVD1352

Circuit

SPST-NO (1 Form A)

Output Type

On-state Resistance

1.5 Ohm

Load Current

500mA

Voltage - Input

1.2VDC

Voltage - Load

0 ~ 100 V

Mounting Type

Through Hole

Termination Style

PC Pin

Package / Case

8-DIP (0.300", 7.62mm), 4 Leads

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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General Description

The Photovoltaic DC Relay (PVD) is a single-pole,

normally open solid state replacement for electro-

mechanical relays used for general purpose switch-

ing of analog signals. It utilizes as an output switch a

unique bidirectional (AC or DC) MOSFET power IC

termed a BOSFET. The BOSFET is controlled by a

photovoltaic generator of novel construction, which

is energized by radiation from a dielectrically iso-

lated light emitting diode (LED).

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operat-

ing speed, low pick-up power, bounce-free opera-

tion, low thermal voltages and miniaturization. These

advantages allow product improvement and design

innovations in many applications such as process

control, multiplexing, telecommunications, automatic

test equipment and data acquisition.

The PVD can switch analog signals from thermo-

couple level to 300 volts peak DC. Signal frequen-

cies into the RF range are easily controlled and

switching rates up to 6kHz are achievable. The ex-

tremely small thermally generated offset voltages

allow increased measurement accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD. The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate pro-

tection functions. This section of the BOSFET chip

utilizes both bipolar and MOS technology to form

NPN transistors, P-channel MOSFETs, resistors, di-

odes and capacitors.

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this

technique results in the very fast response of the

PVD microelectronic power IC relay.

This advanced semiconductor technology has cre-

ated a radically new control device. Designers can

now develop switching systems to new standards of

electrical performance and mechanical compactness.

Replaced by PVD33N

Part Identification

Part Number

PVD2352

PVD3354

Single-Pole, 220mA, 0-300V DC

Voltage (DC)

Operating

3 milliwatts Pick-Up Power

200V

300V

Microelectronic Power IC

100µsec Operating Time

Data Sheet No. PD10025E

BOSFET Power IC

8-pin DIP Package

Series PVD33

1000V/µsec dv/dt

Sensitivity

UL recognized

-40°C to 85°C

5 mA

Bounce-Free

Operations

Features

Resistance

Off-State

Ohms

Related parts for PVD1352

PVD1352 Summary of contents

Page 1

... MOS technology to form NPN transistors, P-channel MOSFETs, resistors, di- odes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay. ...

Page 2

8,!! Electrical Specifications (-40 C INPUT CHARACTERISTICS Minimum Control Current (see figures 1 and 2) For 160mA Continuous Load Current For 200mA Continuous Load Current For 90mA Continuous Load Current Maximum Control Current for Off-State Resistance ...

Page 3

Replaced by PVD33N Ambient Temperature (°C) Figure 1. Current Derating Curves V DS (Volts) Figure 3.Typical On Characteristics 3 I LED (mA) Figure 2. Typical Control Current Requirements Ambient Temperature (°C) Figure 4. Typical On-Resistance 5AHE 8,!! ...

Page 4

8,!! Ambient Temperature (°C) Figure 5. Normalized Off-State Leakage Delay Time (microseconds) Figure 7.Typical Delay Times Replaced by PVD33N LED Forward Voltage Drop (Volts DC) Figure 6. Input Characteristics Figure 8. Delay Time Definitions 4 (Current ...

Page 5

Wiring Diagram 5 Replaced by PVD33N V DS Drain to Source Voltage Figure 9. Typical Output Capacitance 5AHE 8,!! ...

Page 6

8,!! Case Outline Mechanical Specifications: Package: 8-pin DIP Tolerances: .015 (.38) unless otherwise specified Case Material: molded epoxy Weight: .07 oz. (2 gr.) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ ...

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