r1lv0408d Renesas Electronics Corporation., r1lv0408d Datasheet

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r1lv0408d

Manufacturer Part Number
r1lv0408d
Description
4m Sram 512-kword ?? 8-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet

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R1LV0408D Series
4M SRAM (512-kword × 8-bit)
Description
The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high-
performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,
higher performance and low power consumption. The R1LV0408D Series offers low power standby
power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-
pin TSOP II and 32-pin STSOP.
Features
• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
• Equal access and cycle times
• Common data input and output.
• Directly TTL compatible.
• Battery backup operation.
Rev.1.00, May.24.2007, page 1 of 12
 Standby: 3 µW (typ)
 Three state output
 All inputs and outputs
REJ03C0310-0100
May.24.2007
Rev.1.00

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r1lv0408d Summary of contents

Page 1

... SRAM (512-kword × 8-bit) Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high- performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, higher performance and low power consumption. The R1LV0408D Series offers low power standby power dissipation ...

Page 2

... R1LV0408D Series Ordering Information Type No. Access time R1LV0408DSP-5S R1LV0408DSP-7L R1LV0408DSB-5S R1LV0408DSB-7L R1LV0408DSA-5S R1LV0408DSA-7L Temperature version; see table below. % Temperature Range +70°C −40 to +85°C I Rev.1.00, May.24.2007, page Package 525-mil 32-pin plastic SOP (32P2M-A) 400-mil 32-pin plastic TSOP II (32P3Y-H) 8mm × ...

Page 3

... R1LV0408D Series Pin Arrangement 32-pin SOP 32-pin TSOP 1 32 A18 2 31 A16 3 30 A14 4 29 A12 (Top view) Pin Description Pin name Function A0 to A18 ...

Page 4

... R1LV0408D Series Block Diagram LSB A10 A11 A12 A13 A14 A15 A16 MSB I/O0 I/O7 CS# Timing Pulse Generator WE# OE# Rev.1.00, May.24.2007, page • • • Memory Matrix • Row × 2,048 2,048 • Decoder • Column I/O • Input Column Decoder ...

Page 5

... R1LV0408D Series Operation Table WE# CS# OE# Mode × × H Not selected Output disable Read Write Write , ×: V Note Absolute Maximum Ratings Parameter Power supply voltage relative Terminal voltage on any pin relative to V Power dissipation ...

Page 6

... R1LV0408D Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5S% Standby to +85°C current to +70°C to +40°C to +25°C −7L% to +85°C to +70°C to +40°C to +25°C Output low voltage Output high voltage Note: 1 ...

Page 7

... Input rise and fall time • Input and output timing reference levels: 1.5 V • Output load: 1 TTL Gate + C (50 pF) (R1LV0408D-5S TTL Gate + C (100 pF) (R1LV0408D-7L%) L (Including scope and jig) Note: Temperature range depends on R/I-version. Please see table on page 2. Read Cycle Parameter ...

Page 8

... R1LV0408D Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Notes: 1 ...

Page 9

... R1LV0408D Series Timing Waveform Read Timing Waveform (WE Address CS# OE# High impedance Dout Rev.1.00, May.24.2007, page Valid address OLZ OHZ Valid data t OH ...

Page 10

... R1LV0408D Series Write Timing Waveform (1) (OE# Clock) Address OE# CS# WE# Dout Din Rev.1.00, May.24.2007, page Valid address OHZ High impedance t DW Valid data ...

Page 11

... R1LV0408D Series Write Timing Waveform (2) (OE# Low Fixed) Address CS# WE Dout Din Rev.1.00, May.24.2007, page Valid address WHZ High impedance Valid data *10 *11 ...

Page 12

... R1LV0408D Series Low V Data Retention Characteristics CC ( +70°C / −40 to +85°C) Parameter V for data retention CC −5S% Data to +85°C retention to +70°C current to +40°C to +25°C −7L% to +85°C to +70°C to +40°C to +25°C Chip deselect to data retention time ...

Page 13

... Revision History Rev. Date Page  0.01 Dec. 25, 2006 1.00 May. 24, 2007 6 12 R1LV0408D Series Data Sheet Contents of Modification Initial issue DC Characteristics (-5S%) (to +25°C) max: 3 µA to 2.5 µA I SB1 Low V Data Retention Characteristics CC (-5S%) (to +25°C) max: 3 µA to 2.5 µA I CCDR Deletion of note 2 Description ...

Page 14

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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