RHRP8120 Fairchild Semiconductor, RHRP8120 Datasheet
RHRP8120
Manufacturer Part Number
RHRP8120
Description
DIODE HYPER 1200V 8A TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.RHRP8120.pdf
(5 pages)
Specifications of RHRP8120
Voltage - Forward (vf) (max) @ If
3.2V @ 8A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
70ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.2 V
Recovery Time
70 ns
Forward Continuous Current
8 A
Max Surge Current
100 A
Reverse Current Ir
100 uA
Power Dissipation
75 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RHRP8120
Manufacturer:
HARRIS
Quantity:
5 000
Part Number:
RHRP8120
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery
characteristics (t
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49096.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RHRP8120
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 140
o
C)
rr
< 55ns). It has half the recovery time of
TO-220AC
PACKAGE
K
A
T
Data Sheet
C
= 25
RHRP8120
o
C, Unless Otherwise Specified
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
STG
CATHODE
(FLANGE)
January 2002
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
JEDEC TO-220AC
RHRP8120
-65 to 175
1200
1200
1200
100
16
75
20
8
RHRP8120
ANODE
CATHODE
UNITS
RHRP8120 Rev. B
mJ
o
W
V
V
V
A
A
A
C
o
C
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RHRP8120 Summary of contents
Page 1
... Data Sheet 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (t < 55ns). It has half the recovery time of rr ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifi variety of switching power supplies and other power switching applications ...
Page 2
... I RM 0.001 MIN TYP MAX - - 3 2 100 - - 500 - - 165 - - through 25 (See Figure 9 500 o 175 C 100 10 o 100 0.1 0.01 200 400 600 800 REVERSE VOLTAGE (V) R FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE UNITS V V µ A µ C/W 1200 1000 RHRP8120 Rev. B ...
Page 3
... Fairchild Semiconductor Corporation (Continued) 100 /dt = 200A/µ FIGURE 175 C, dI /dt = 200A/µ 100 100 V , REVERSE VOLTAGE ( 100 0 FORWARD CURRENT ( AND t CURVES vs FORWARD CURRENT SQ. WAVE 100 115 130 145 T , CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 /dt = 200A/µ 160 175 o C) RHRP8120 Rev. B ...
Page 4
... R < 0.1Ω 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 0. RHRP8120 Rev. B ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...