Q67000-S007 SIEMENS [Siemens Semiconductor Group], Q67000-S007 Datasheet
Q67000-S007
Related parts for Q67000-S007
Q67000-S007 Summary of contents
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... Small-Signal Transistor • N channel • Enhancement mode • 1.6 ...2.6 V GS(th) Type V DS BSS 119 100 V Type Ordering Code BSS 119 Q67000-S007 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current °C A ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate- reverse side DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 0. ...
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Power dissipation tot A 0.40 W 0.32 P tot 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area I = parameter : D = 0.01, ...
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Typ. output characteristics parameter µ ° 0. tot 0. 0.28 0.24 ...
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Drain-source on-resistance (on) j parameter 0. (on 98 typ ...
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Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 BSS 119 Sep-13-1996 ...