SA58670 NXP Semiconductors, SA58670 Datasheet

SA58670

Manufacturer Part Number
SA58670
Description
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
SA58670BS
Manufacturer:
PHILIPS
Quantity:
1 831
1. General description
2. Features
3. Applications
The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670 features independent shutdown controls for each channel. The gain may be
set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to
noise and RF rectification is increased by high PSRR and differential circuit topology. Fast
start-up time and small package makes it an ideal choice for both cellular handsets and
PDAs.
The SA58670 delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 . It
delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent at
70 % to 74 % into 4
short-circuit shutdown protection.
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SA58670
2.1 W/channel stereo class-D audio amplifier
Rev. 03 — 11 June 2009
Output power:
Supply voltage: 2.5 V to 5.5 V
Independent shutdown control for each channel
Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB
High SVRR: 77 dB at 217 Hz
Fast start-up time: 3.5 ms
Low supply current
Low shutdown current
Short-circuit and thermal protection
Space savings with 4 mm
Low junction to ambient thermal resistance of 24 K/W with exposed DAP
Wireless and cellular handset and PDA
Portable DVD player
USB speaker
Notebook PC
Portable radio and gaming
N
N
N
2.1 W/channel into 4
1.4 W/channel into 8
720 mW/channel into 8
and 84 % to 88 % into 8 . The SA58670 provides thermal and
at 5.0 V
at 5.0 V
4 mm HVQFN20 package
at 3.6 V
Product data sheet

Related parts for SA58670

SA58670 Summary of contents

Page 1

... RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package makes it an ideal choice for both cellular handsets and PDAs. The SA58670 delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent into 4 short-circuit shutdown protection ...

Page 2

... ADJUST INLN SDR 300 k BIAS CIRCUITRY 7 SDL 300 k Refer to Table 6 for gain selection. Block diagram Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifi PVDD 14 OUTRP H- PWM 11 OUTRN BRIDGE INTERNAL GND OSCILLATOR 2 OUTLP H- PWM 5 OUTLN ...

Page 3

... Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifi OUTRP SA58670BS 13 PVDD 12 PGND (1) 11 OUTRN 001aah483 © NXP B.V. 2009. All rights reserved ...

Page 4

... PVDD and pin AVDD. Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifier [1] Min 0.3 0.3 GND GND 0 2000 200 SA58670 Max Unit +6 5.2 W 3.12 W 2.7 W +85 C ...

Page 5

... measured differentially; inputs AC grounded dB; v( 0.35 V SDR SDL Rev. 03 — 11 June 2009 SA58670 Min Typ Max 2 1000 - ...

Page 6

... Hz v( 217 Hz DD v(cl v(cl v(cl v(cl v( kHz; DD inputs are AC grounded no weighting A weighting Rev. 03 — 11 June 2009 SA58670 Min Typ Max Unit - ...

Page 7

... 3 5 Total harmonic distortion-plus-noise as a function of output power; R Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah484 (1) (2) ( (W) o 001aah485 (1) (2) ( (W) o © ...

Page 8

... 3 5 Total harmonic distortion-plus-noise as a function of output power; R Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah486 (1) (2) ( (W) o 001aah487 (1) (2) ( (W) o © ...

Page 9

... V = 600 mV (RMS mW 424.3 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah488 (Hz) 001aah489 (Hz) © NXP B.V. 2009. All rights reserved. ...

Page 10

... V = 616.4 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah490 (Hz) 001aah491 (Hz) © NXP B.V. 2009. All rights reserved. ...

Page 11

... V (RMS 380 mW 871.8 mV (RMS dB. v(cl) Total harmonic distortion-plus-noise as a function of frequency; V Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah492 (Hz) 001aah493 (Hz) © NXP B.V. 2009. All rights reserved. ...

Page 12

... Noise output voltage (RMS value function of frequency Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier 001aah495 (Hz) 001aah497 3 10 © NXP B.V. 2009. All rights reserved (Hz ...

Page 13

... (1) (2) 100 (3) 120 Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifier (1) (2) ( SA58670 001aah505 (kHz) 001aah506 (kHz) © NXP B.V. 2009. All rights reserved ...

Page 14

... W/channel stereo class-D audio amplifier 5 4.5 3.5 2.5 2.5 3.5 4.5 (1) left channel (2) right channel (3) right channel 800 I DD 600 400 (1) (2) (3) 200 0 0 0.4 0 SA58670 001aah508 (1) (2) (3) 5.5 V (V) DD 001aah510 1.2 1.6 P (W) o © NXP B.V. 2009. All rights reserved ...

Page 15

... P (W) o 001aah513 (1) 1.2 1.6 2.0 P (W) o Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifier 0.4 P (W) 0.3 0.2 (2) 0.1 ( 0.4 0 100 po 80 (3) ( 0.4 0 SA58670 001aah512 (1) 1.2 1.6 P (W) o 001aah514 (1) 1.2 1.6 P (W) o © NXP B.V. 2009. All rights reserved ...

Page 16

... Equivalent Series Resistance (ESR) capacitor of typically placed as close as possible to the PVDD pins of the SA58670 important to place the decoupling capacitor at the supply voltage pins of the SA58670 because any resistance or inductance in the PCB trace between the SA58670 and the capacitor can cause a loss in effi ...

Page 17

... PCB layout considerations Component location is very important for performance of the SA58670. Place all external components very close to the SA58670. Placing decoupling capacitors directly at the power supply voltage pins increases efficiency because the resistance and inductance in the trace between the SA58670 power supply voltage pins and the decoupling capacitor causes a loss in power effi ...

Page 18

... max th j-a max load. If the junction temperature of the SA58670 rises above 150 C, the further enhances thermal performance and battery lifetime by Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifier Table 3 “Limiting values”, the power derating is the reciprocal of the ...

Page 19

... REFERENCES JEDEC JEITA MO-220 - - - Rev. 03 — 11 June 2009 2.1 W/channel stereo class-D audio amplifi detail 0.6 0.05 0.1 2 0.1 0.05 0.4 EUROPEAN PROJECTION SA58670 SOT917 ISSUE DATE 05-10-08 05-10-31 © NXP B.V. 2009. All rights reserved ...

Page 20

... Solder bath specifications, including temperature and impurities SA58670_3 Product data sheet 2.1 W/channel stereo class-D audio amplifier Rev. 03 — 11 June 2009 SA58670 © NXP B.V. 2009. All rights reserved ...

Page 21

... Lead-free process (from J-STD-020C) Package reflow temperature ( C) 3 Volume (mm ) < 350 260 260 250 Figure 18. Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier Figure 18) than a SnPb process, thus 350 220 220 350 to 2000 > 2000 260 260 250 245 ...

Page 22

... ElectroMagnetic Interference Equivalent Series Resistance inductor-capacitor filter Personal Computer Printed-Circuit Board Personal Digital Assistant Pulse Width Modulator Universal Serial Bus Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier peak temperature © NXP B.V. 2009. All rights reserved. time 001aac844 ...

Page 23

... Min value from “1.3 V” to “0.7 IH Max value from “0.35 V” to “0.3 IL Product data sheet Product data sheet Rev. 03 — 11 June 2009 SA58670 Change notice Supersedes - SA58670_2 V V” V” SA58670_1 - - © NXP B.V. 2009. All rights reserved ...

Page 24

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 11 June 2009 SA58670 2.1 W/channel stereo class-D audio amplifier © NXP B.V. 2009. All rights reserved ...

Page 25

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com SA58670 All rights reserved. Date of release: 11 June 2009 Document identifier: SA58670_3 ...

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