SI4925 Fairchild Semiconductor, SI4925 Datasheet

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SI4925

Manufacturer Part Number
SI4925
Description
Dual P-Channel/ Logic Level/ PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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© 2001 Fairchild Semiconductor International
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
Absolute Maximum Ratings
Dual P-Channel, Logic Level, PowerTrench MOSFET
J
Si4925DY
General Description
These P-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
DSS
GSS
D
,T
JA
JC
STG
SOT-23
D1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
SuperSOT
D2
- Pulsed
pin 1
TM
S1
-6
G1
T
A
S2
= 25
SuperSOT
G2
o
C unless otherwise noted
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
(Note 1a)
TM
-8
Features
SO-8
-6 A, -30 V. R
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
R
High power and current handling capability.
DS(ON)
.
5
6
7
8
R
DS(ON)
DS(ON)
-55 to 150
Si4925DY
±20
-30
-20
1.6
0.9
78
40
-6
= 0.045
SOT-223
= 0.032
2
1
@ V
@ V
GS
GS
= -4.5 V.
= -10 V,
4
3
2
1
January 2001
SOIC-16
Si4925DY Rev.A
°C/W
°C/W
Units
°C
W
V
V
A

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SI4925 Summary of contents

Page 1

... unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2001 = 0.032 @ V = -10 V, DS(ON 0.045 @ V = -4.5 V. DS(ON SOIC-16 SOT-223 Si4925DY -30 ±20 -6 -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W Si4925DY Rev.A ...

Page 2

... J 0.034 0.045 -20 16 1540 400 170 14 -1.3 -0.73 -1.2 is guaranteed 135 C 0.003 in 2 pad of 2oz copper. Si4925DY Rev.A Units V o mV/ C µA µ mV ...

Page 3

... Dain Current and Gate Voltage - 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125° 25° C -55° C 0.3 0.6 0.9 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4925DY Rev 1.5 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 20 30 300 300 Si4925DY Rev.A ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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