SI8462 Silicon Laboratories, SI8462 Datasheet

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SI8462

Manufacturer Part Number
SI8462
Description
Manufacturer
Silicon Laboratories
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8462BB-B-IS1
Manufacturer:
PHILIPS
Quantity:
334
U
Features
Applications
Safety Regulatory Approvals*
Description
Silicon Lab's family of ultra low power digital isolators are CMOS devices
that employ an RF coupler to transmit digital information across an isolation
barrier. Very high speed operation at low power levels is achieved. These
devices are available in a 16-pin narrow body SOIC package. Two speed
grade options (1 and 150 Mbps) are available and achieve typical
propagation delays of less than 10 ns.
Block Diagram
*Note: Pending.
Rev. 0.1 2/09
A2
A3
A4
A5
A6
A1
L T R A
High-speed operation:
DC – 150 Mbps
Low propagation delay:
<10 ns typical
Wide Operating Supply Voltage:
2.75–5.5 V
Ultra low power
5 V Operation:



2.75 V Operation:



Isolated switch mode supplies
Isolated ADC, DAC
UL recognition: 2500 V
Minute per UL1577
CSA component acceptance notice
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
<1.25 mA per channel at 1 Mbps
<2 mA per channel at 10 Mbps
<6 mA per channel at 100 Mbps
<1.25 mA per channel at 1 Mbps
<2 mA per channel at 10 Mbps
<4 mA per channel at 100 Mbps
Si8460
L
B1
B2
B3
B4
B5
B6
O W
A2
A3
A4
A5
A6
A1
P
RMS
Si8461
O W E R
for 1
B1
B2
B3
B4
B5
B6
Copyright © 2009 by Silicon Laboratories
A5
A2
A3
A4
A6
A1
S
Precise timing:
2 ns pulse width distortion
1 ns channel-channel matching
2 ns pulse width skew
Up to 2500 V
Transient Immunity: 25 kV/µs
DC correct
No start-up initialization required
<30 µs startup time
High temperature operation:
125 °C at 150 Mbps
Narrow body SOIC-16 package
RoHS-compliant
Motor control
Power factor correction systems
VDE certification conformity

I X
IEC 60747-5-2
(VDE0884 Part 2)
Si8462
-C
H A N N E L
RMS
B5
B6
B1
B2
B3
B4
isolation
A3
A4
A5
A6
A1
A2
Si8463
D
I G I TA L
S i 8 4 6 0 / 6 1 / 6 2 / 6 3
B5
B6
B1
B2
B3
B4
GND1
V
DD1
A1
A2
A4
A3
A5
A6
Narrow Body SOIC
I
S O L A T O R
Pin Assignments
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
Si8460/61/62/63
B5
B6
B1
B2
B3
B4
GND2
V
DD2

Related parts for SI8462

SI8462 Summary of contents

Page 1

... High temperature operation:  125 °C at 150 Mbps Narrow body SOIC-16 package  RoHS-compliant  Motor control  Power factor correction systems  VDE certification conformity  IEC 60747-5-2  (VDE0884 Part 2) Si8462 Si8463 ...

Page 2

Si8460/61/62/63 2 Rev. 0.1 ...

Page 3

T C ABLE O F ONTENTS Section 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... DC Supply Current (All inputs Supply) Si8460Ax DD1 V DD2 V DD1 V DD2 Si8461Ax DD1 V DD2 V DD1 V DD2 Si8462Ax DD1 V DD2 V DD1 V DD2 Si8463Ax DD1 V DD2 V DD1 V DD2 1 Mbps Supply Current (All inputs = 500 kHz square wave all outputs) ...

Page 5

... Table 1. Electrical Characteristics ( V±10 V±10%, T DD1 DD2 A Parameter Symbol Si8462Ax DD1 V DD2 Si8463Ax DD1 V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 V DD2 Si8461Bx V DD1 V DD2 Si8462Bx V DD1 V DD2 ...

Page 6

Si8460/61/62/63 Table 1. Electrical Characteristics ( V±10 V±10%, T DD1 DD2 A Parameter Symbol Channel-Channel Skew For All Models Output Rise Time Output Fall Time Common Mode Transient CMTI Immunity 4 Start-up Time Notes: 1. ...

Page 7

... V DD1 V DD2 Si8461Ax DD1 V DD2 Si8462Ax DD1 V DD2 Notes: 1. Electrical specification values are preliminary. Various specifications will be adjusted to reflect actual performance as final product characterization data becomes available the magnitude of the difference in propagation delay times measured between different units operating at PSK(P-P) the same supply voltages, load, and ambient temperature ...

Page 8

... Si8463Ax DD1 V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 V DD2 Si8461Bx V DD1 V DD2 Si8462Bx V DD1 V DD2 Si8463Bx V DD1 V DD2 Si846xA Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion |t ...

Page 9

Table 2. Electrical Characteristics (V = 3.3 V±10 3.3 V±10%, T DD1 DD2 Parameter Output Fall Time Common Mode Transient Immunity at Logic Low Output 3 Start-up Time Notes: 1. Electrical specification values are preliminary. Various specifications will ...

Page 10

... V DD1 V DD2 Si8461Ax DD1 V DD2 Si8462Ax DD1 V DD2 Notes: 1. Electrical specification values are preliminary. Various specifications will be adjusted to reflect actual performance as final product characterization data becomes available the magnitude of the difference in propagation delay times measured between different units operating at the PSK(P-P) same supply voltages, load, and ambient temperature ...

Page 11

... Si8463Ax DD1 V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) Si8460Bx V DD1 V DD2 Si8461Bx V DD1 V DD2 Si8462Bx V DD1 V DD2 Si8463Bx V DD1 V DD2 Si846xA Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion |t ...

Page 12

Si8460/61/62/63 Table 3. Electrical Characteristics ( –40 to 125 ºC; applies to narrow-body SOIC package) DD1 DD2 A Parameter Output Fall Time Common Mode Transient Immunity at Logic Low Output 3 ...

Page 13

Table 6. Regulatory Information* CSA The Si846x is certified under CSA Component Acceptance Notice. For more details, see File 232873. VDE The Si846x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL The Si846x is certified ...

Page 14

Si8460/61/62/63 Table 9. IEC 60747-5-2 Insulation Characteristics for Si846xxB* Parameter Maximum Working Insulation Voltage Input to Output Test Voltage Highest Allowable Overvoltage (Transient Overvoltage sec) TR Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance at T ...

Page 15

Figure 2. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Si8460/61/62/ 2.75 V DD1 DD2 V , ...

Page 16

... Supply Current Figure 8. Si8462 Typical V vs. Data Rate 5, 3.3, and 2.75 V Operation Rev. 0.1 5V 3.3V 2.75V Data Rate (Mbps) Supply Current DD2 (15 pF Load) 5V 3.3V 2.75V Data Rate (Mbps) Supply Current ...

Page 17

Data Rate (Mbps) Figure 9. Si8463 Typical V DD1 vs. Data Rate 5, 3.3, and 2.75 V Operation ...

Page 18

Si8460/61/62/63 3. Application Information 3.1. Theory of Operation The operation of an Si846x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path ...

Page 19

Eye Diagram Figure 16 illustrates an eye-diagram taken on an Si8460. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8460 ...

Page 20

Si8460/61/62/63 4. Layout Recommendations Dielectric isolation is a set of specifications produced by the safety regulatory agencies from around the world that describes the physical construction of electrical equipment that derives power from a high-voltage power system such as 100–240 ...

Page 21

Input and Output Characteristics The Si846x inputs and outputs are standard CMOS drivers/receivers. Table 12 details powered and unpowered operation of the Si846x. V VDDI VDDO I 1,3,4 1,3,4 1,2 State State Input ...

Page 22

Si8460/61/62/63 4.3. RF Radiated Emissions The Si846x family uses a RF carrier frequency of approximately 700 MHz. This results in a small amount of radiated emissions at this frequency and its harmonics. The radiation is not from the IC chip ...

Page 23

RF Immunity and Common Mode Transient Immunity The Si846x family has very high common mode transient immunity while transmitting data. This is typically measured by applying a square pulse with very fast rise/fall times between the isolated grounds. Measurements ...

Page 24

Si8460/61/62/63 5. Pin Descriptions Name SOIC-16 Pin DD1 GND1 8 GND2 ...

Page 25

... Si8460BB-A-IS1 6 Si8461AB-A-IS1 5 Si8461BB-A-IS1 5 Si8462AB-A-IS1 4 Si8462BB-A-IS1 4 Si8463AB-A-IS1 3 Si8463BB-A-IS1 3 Note: All packages are Pb-free and RoHS compliant. Moisture sensitivity level is MSL3 with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications, and peak solder temperature. ...

Page 26

Si8460/61/62/63 7. Package Outline: 16-Pin Narrow Body SOIC Figure 21 illustrates the package details for the Si846x in a 16-pin narrow-body SOIC (SO-16). Table 15 lists the values for the dimensions shown in the illustration. All packages are Pb-free and ...

Page 27

Table 15. Package Diagram Dimensions (Continued 0.25 θ 0° aaa bbb ccc ddd Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. This drawing conforms to the ...

Page 28

Si8460/61/62/63 8. Top Marking Figure 22. Si8460/61/62/63 Top Marking Base Part Number Line 1 Marking: Ordering Options (See Ordering Guide for more information Year Line 2 Marking Workweek TTTTTT = Mfg Code Circle = 1.5 mm ...

Page 29

N : OTES Si8460/61/62/63 Rev. 0.1 29 ...

Page 30

... Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where per- sonal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap- plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages ...

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